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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
IRF7453-ND	IRF7453	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 230 mOhm @ 1.3A, 10V Vgs(th) (Max) @ Id: 5.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 25V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
IRFR3504PBF-ND	IRFR3504PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V Power Dissipation (Max): 140W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IRF3305PBF-ND	IRF3305PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 25V Power Dissipation (Max): 330W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	--
IRF3711ZCLPBF-N D	IRF3711ZCLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 92A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.45V @ 250A Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V Power Dissipation (Max): 79W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, IPak, TO-262AA	1000 Order	1+: $0
BB689E7908-ND	BB 689 E7908	Infineon Technologies	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz Capacitance Ratio: 23.2 Capacitance Ratio Condition: C1/C28 Voltage - Peak Reverse (Max): 30V Diode Type: Single Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-80 Supplier Device Package: PG-SCD80-2 Base Part Number: BB689	1000 Order	1+: $0
BTS113ANKSA1-ND	BTS113ANKSA1	Infineon Technologies	View more Series: TEMPFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V Rds On (Max) @ Id, Vgs: 170 mOhm @ 5.8A, 4.5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Power Dissipation (Max): 40W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: P-TO220AB Package / Case: TO-220-3	1000 Order	1+: $0
IPP100N06S3L-04 IN-ND	IPP100N06S3L-04	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2.2V @ 150A Gate Charge (Qg) (Max) @ Vgs: 362nC @ 10V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 17270pF @ 25V Power Dissipation (Max): 214W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	1000 Order	1+: $0
T300N16TOFXPSA1 -ND	T300N16TOFXPSA1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Single Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR Voltage - Off State: 1.8kV Current - On State (It (AV)) (Max): 303A Current - On State (It (RMS)) (Max): 400A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 3800A @ 50Hz Current - Hold (Ih) (Max): 200mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK	1000 Order	1+: $42.651
SPB100N04S2L-03 -ND	SPB100N04S2L-03	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
BA89202VH6327XT SA1TR-ND	BA89202VH6327XT SA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Diode Type: Standard - Single Voltage - Peak Reverse (Max): 35V Current - Max: 100mA Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz Resistance @ If, F: 500 mOhm @ 10mA, 100MHz Operating Temperature: 150C (TJ) Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2 Base Part Number: BA892	1000 Order	45000+: $0.0349
IRGI4062DPBF-ND	IRGI4062DPBF	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 1 (Unlimited) IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 22A Current - Collector Pulsed (Icm): 44A Vce(on) (Max) @ Vge, Ic: 1.58V @ 15V, 12A Power - Max: 48W Switching Energy: 31J (on), 183J (off) Input Type: Standard Gate Charge: 48nC Td (on/off) @ 25C: 41ns/100ns Test Condition: 400V, 12A, 10 Ohm, 15V Reverse Recovery Time (trr): 56ns Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220AB Full-Pak	1000 Order	1+: $0
BAS70E6327HTSA1 TR-ND	BAS70E6327HTSA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 70mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal = Reverse Recovery Time (trr): 100ps Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55C ~ 125C Base Part Number: BAS70	1000 Order	3000+: $0.0452 6000+: $0.0407 15000+: $0.0362 30000+: $0.0339 75000+: $0.0302
IRL3303STRLPBF- ND	IRL3303STRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
IRL1104STRLPBF- ND	IRL1104STRLPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 68nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 3445pF @ 25V Power Dissipation (Max): 2.4W (Ta), 167W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
BSS84PL6433HTMA 1TR-ND	BSS84PL6433HTMA 1	Infineon Technologies	View more Series: SIPMOS Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8 Ohm @ 170mA, 10V Vgs(th) (Max) @ Id: 2V @ 20A Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 25V Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
IRF7811WGTRPBFT R-ND	IRF7811WGTRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250A Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2335pF @ 16V Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
IRFH7934TR2PBFC T-ND	IRFH7934TR2PBF	Infineon Technologies	View more Series: HEXFET Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 24A (Ta), 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 2.35V @ 50A Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 15V Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	1000 Order	1+: $0
IRF8252PBF-ND	IRF8252PBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.35V @ 100A Gate Charge (Qg) (Max) @ Vgs: 53nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 5305pF @ 13V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	--
AUIRLS3114Z-ND	AUIRLS3114Z	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 56A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 53nC @ 4.5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 3617pF @ 25V Power Dissipation (Max): 143W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
IPU50R950CEBKMA 1-ND	IPU50R950CEBKMA 1	Infineon Technologies	View more Series: CoolMOS CE Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.2A, 13V Vgs(th) (Max) @ Id: 3.5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 100V Power Dissipation (Max): 34W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
DT250N20/16KOF- ND	DT250N20/16KOF	Infineon Technologies	View more Part Status: Active	1000 Order	3+: $93.7398
T1330N22TOFVTXP SA1-ND	T1330N22TOFVTXP SA1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Single Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR Voltage - Off State: 2.2kV Current - On State (It (AV)) (Max): 1330A Current - On State (It (RMS)) (Max): 2600A Voltage - Gate Trigger (Vgt) (Max): 2.2V Current - Gate Trigger (Igt) (Max): 250mA Current - Non Rep. Surge 50, 60Hz (Itsm): 26500A @ 50Hz Current - Hold (Ih) (Max): 300mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: DO-200AC, K-PUK	1000 Order	1+: $176.312
IR3570AMGB11TRP -ND	IR3570AMGB11TRP	Infineon Technologies	View more Series: * Part Status: Last Time Buy	1000 Order	1+: $0
IRS2500SPBF-ND	IRS2500SPBF	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete Mode: Critical Conduction (CRM) Current - Startup: 50A Voltage - Supply: 11.5 V ~ 20 V Operating Temperature: -25C ~ 125C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Base Part Number: IRS2500SPBF	1000 Order	--
IR2156PBF-ND	IR2156PBF	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete Type: Ballast Controller Frequency: 36kHz ~ 44kHz Voltage - Supply: 10.5 V ~ 16.5 V Current - Supply: 10mA Dimming: No Operating Temperature: -25C ~ 125C Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: 14-DIP Base Part Number: IR2156PBF	1000 Order	--
IR2104SPBF-ND	IR2104SPBF	Infineon Technologies	View more Packaging: Tube Part Status: Active Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 210mA, 360mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 100ns, 50ns Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Base Part Number: IR2104SPBF	844 Order	1+: $1.5876 10+: $1.427 100+: $1.1469 500+: $0.9423 1000+: $0.7808
IR21064PBF-ND	IR21064PBF	Infineon Technologies	View more Packaging: Tube Part Status: Active Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.9V Current - Peak Output (Source, Sink): 200mA, 350mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 150ns, 50ns Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: 14-DIP Base Part Number: IR21064PBF	115 Order	--
IR2213STRPBFTR- ND	IR2213STRPBF	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 12 V ~ 20 V Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 2A, 2.5A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 1200V Rise / Fall Time (Typ): 25ns, 17ns Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC Base Part Number: IR2213SPBF	1000 Order	--
IRS2336STRPBFTR -ND	IRS2336STRPBF	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Active Driven Configuration: Half-Bridge Channel Type: 3-Phase Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 200mA, 350mA Input Type: Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 125ns, 50ns Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SOIC Base Part Number: IRS2336SPBF	1000 Order	1000+: $2.2557
IR2136-ND	IR2136	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete Driven Configuration: Half-Bridge Channel Type: 3-Phase Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 200mA, 350mA Input Type: Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 125ns, 50ns Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: 28-DIP (0.600", 15.24mm) Supplier Device Package: 28-PDIP Base Part Number: IR2136	1000 Order	1+: $0
IR2112-1-ND	IR2112-1	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 250mA, 500mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 80ns, 40ns Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm), 13 Leads Supplier Device Package: 14-PDIP Base Part Number: IR2112-1	1000 Order	1+: $0
IR2112-1PBF-ND	IR2112-1PBF	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 250mA, 500mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 80ns, 40ns Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm), 13 Leads Supplier Device Package: 14-PDIP Base Part Number: IR2112-1PBF	1000 Order	1+: $0
46DN06ELEMPRXPS A1-ND	46DN06ELEMPRXPS A1	Infineon Technologies	View more Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5100A Voltage - Forward (Vf) (Max) @ If: 1.36V @ 14000A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 60mA @ 600V Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Operating Temperature - Junction: -40C ~ 180C	1000 Order	1+: $150.809
D740N48TXPSA1-N D	D740N48TXPSA1	Infineon Technologies	View more Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4800V Current - Average Rectified (Io): 750A Voltage - Forward (Vf) (Max) @ If: 1.45V @ 700A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 70mA @ 4800V Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Operating Temperature - Junction: -40C ~ 160C	1000 Order	1+: $200.882
IDD03SG60CXTMA1 TR-ND	IDD03SG60CXTMA1	Infineon Technologies	View more Series: CoolSiC Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 2.3V @ 3A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 15A @ 600V Capacitance @ Vr, F: 60pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55C ~ 175C Base Part Number: IDD03SG60	1000 Order	2500+: $0.5866 5000+: $0.5649
IDW40G65C5FKSA1 -ND	IDW40G65C5FKSA1	Infineon Technologies	View more Series: CoolSiC Packaging: Bulk Part Status: Discontinued at Digi-Key Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 40A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 40A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 1.4mA @ 650V Capacitance @ Vr, F: 1140pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55C ~ 175C	1000 Order	1+: $12.6189 10+: $11.6827 100+: $10.0298 500+: $9.0378
IDK03G65C5XTMA1 -ND	IDK03G65C5XTMA1	Infineon Technologies	View more Series: CoolSiC Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 3A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 500A @ 650V Capacitance @ Vr, F: 100pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-262 Supplier Device Package: PG-TO263-2 Operating Temperature - Junction: -55C ~ 175C	1000 Order	1000+: $0.5882
DD1200S17H4B2BO SA2-ND	DD1200S17H4B2BO SA2	Infineon Technologies	View more Part Status: Active Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1700V Voltage - Forward (Vf) (Max) @ If: 2.1V @ 1200A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 1250A @ 900V Operating Temperature - Junction: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	2+: $599.722
BAV99SE6433HTMA 1TR-ND	BAV99SE6433HTMA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Configuration: 2 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal = Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 150nA @ 70V Operating Temperature - Junction: 150C (Max) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6 Base Part Number: BAV99S	1000 Order	1+: $0
PRG832801-8A-ND	PRG832801-8A	Infineon Technologies	View more Part Status: Active Type: Programmer Contents: Board(s)	1000 Order	1+: $529.2

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