IPP100N06S3L-04

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The IPP100N06S3L-04 is part of International Rectifier\'s advanced series of Power MOSFETs. It is a single, fast switching N-channel MOSFET, with very low on-state resistance, specified at 25°C. Designers use this device mainly for switching converters and mobile exposure usage in high current power supplies, for which it offers up to 100 amperes continuous current operation. These features make it an ideal choice for applications that have energy savings and high efficiency requirements.

The IPP100N06S3L-04 is based on a special trench structure, which makes it suitable for high-current and high-speed switching performance. It also helps to reduce conduction losses and voltage spikes. The chip includes a rectifying diode and a high-voltage MOSFET. The diode is provided with a low-voltage P-channel MOSFET, while the N-channel MOSFET is provided with a high-voltage N-channel MOSFET.

This power MOSFET can operate over a wide temperature range, from -40°C to 150°C. Its breakdown voltage is greater than 100 volts, and it can be used with a 200-volt peak gate voltage. In addition, the device features low gate charge and low gate resistance. The threshold voltage of the chip is relatively low, making it suitable for applications with fast switching performance.

The IPP100N06S3L-04 is a highly reliable device due to its advanced design and construction techniques. Its metal oxide semiconductor field-effect transistor (MOSFET) construction ensures that the device is built to withstand stress from high-speed switching. Its metal oxide frame serves as an electron-trapping layer, hindering the production of hot carriers and reducing the risk of thermal breakdown. Furthermore, this device is produced using integrated self-protection circuitry, which prevents accidental destruction or malfunction through over-voltage protection.

The principle of operation of the IPP100N06S3L-04 is simple. When the gate voltage is greater than the threshold voltage, the device turns OFF and no current flows between the drain and source. But when the gate voltage is below the threshold voltage, then the device turns ON and current flows between the drain and source. Furthermore, the drain-source voltage also plays a role in determining the state of the device. When the drain-source voltage is greater than the threshold voltage, the device turns OFF and no current flows. But when the voltage across the drain-source is below the threshold voltage, then the device is turned ON and current starts to flow.

The IPP100N06S3L-04 is an ideal choice for high power applications such as electric motor controllers, battery charging circuits and uninterruptible power supplies. Its advanced design and construction makes it ideal for applications that need fast switching combined with energy savings, high efficiency and reliable operation. With its combination of features and specifications, this device stands out as an exceptional choice for any power MOSFET application.

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