| Allicdata Part #: | IRF3305PBF-ND |
| Manufacturer Part#: |
IRF3305PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 55V 75A TO-220AB |
| More Detail: | N-Channel 55V 75A (Tc) 330W (Tc) Through Hole TO-2... |
| DataSheet: | IRF3305PBF Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 330W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3650pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 8 mOhm @ 75A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRF3305PBF is an enhancement mode power Field-Effect Transistor (FET) produced by Infineon Technologies. It is a high-side FET suitable for a variety of applications.
The device is a high-performance N-channel 50 Volt transistor that can deliver a maximum of 40 amperes of continuous drain current while operating at a maximum Vds of 50 Volts. It is a P-type semiconductor package and can provide enhanced heat dissipation capabilities. It is capable of operating at high frequencies up to 1MHz and is available in a variety of packages.
The IRF3305PBF offers exceptional performance in various applications, providing easily controlled drive current over a wide frequency range. It can be used for high current switching, relay/solenoid/lamp/motor control and load switching applications. It is particularly ideal for applications where power supply current control is needed and is suitable for use in automotive body, powertrain and electric vehicle applications.
The working principle of the IRF3305PBF is based on its unique structure, which consists of four terminals—the source, drain, gate, and bulk. Upon applying a voltage to the gate terminal, the FET is turned on, allowing a current to flow between the source and drain terminals. The bulk terminal is connected to the source of the FET, providing an electrical connection that helps to reduce the parasitic capacitance associated with the gate-to-source capacitance, allowing the FET to operate over a wide frequency range and offering high-speed switching capabilities.
The IRF3305PBF provides an ideal solution for applications requiring wide temperature and voltage range, high current switching capability, and small on-resistance values. Thanks to its compact size, low power consumption and wide range of features, the IRF3305PBF is an excellent choice for many applications where space is at a premium and high power requirements are a must.
The specific data is subject to PDF, and the above content is for reference
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IRF3305PBF Datasheet/PDF