IRF8252PBF

Vgs(th) (Max) @ Id:	2.35V @ 100µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5305pF @ 13V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	53nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	2.7 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	25A (Ta)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IRF8252PBF is a single N-channel enhancement mode power MOSFET which is produced by International Rectifier, a manufacturer of power electronic components with a well-known reputation for its reliable and innovative products. It is part of the 5th generation of power MOSFETs with a positive voltage drive, low gate charge, fast switching speed and low on-state resistance. It is designed to provide high level of performance in power control and switch mode power supply (SMPS) applications.IRF8252PBF is a standard size MOSFET with the standard package of TO-263A. It has a maximum drain source voltage of 100V and a maximum source drain current of 40A. The MOSFET has a low gate threshold voltage of 4.5V and an on-resistance of 0.032Ω. It also has a power dissipation rating of 874mW and a gate resistance of 0.53Ω. The IRF8252PBF is primarily used in power switching applications for power control in SMPS, solenoid control and motor control. It is highly efficient since it can operate at frequencies up to 40MHz and has a low gate charge compared to other similar devices. It is also suitable for high voltage applications since it has a maximum drain-source voltage of 100V and a low on-resistance. It can be used in switching application up to 50V.The working principle of MOSFETs is based on the quantum mechanical properties of electrons and holes. They are composed of metal oxide semiconductor (MOS) structures, where a metal gate is placed over the semiconductor channel that contains electrons and holes. When a potential is applied to the metal gate, an electric field is created inside the channel and this electric field modulates the number of electrons and holes. As a result, the current passing through the channel is controlled, which allows for efficient power conversion and switching.The IRF8252PBF has two main modes of operation; the enhancement mode and the depletion mode. In the enhancement mode, a positive voltage is applied on the gate relative to the source of the MOSFET, and the electron-hole pairs in the channel are increased. This allows the MOSFET to conduct the current from the drain to the source. The device is in its depletion mode when the voltage on the gate is equal to or lower than the source voltage, and the number of electron-hole pairs in the channel decreases, thereby preventing the conduction of current. The depletion mode also helps in protecting the MOSFET from high voltages.In summary, IRF8252PBF is an N-channel MOSFET produced by International Rectifier. It has several features that make it suitable for power control applications in SMPS and high voltage switch mode power supplies. The working principle of MOSFETs is based on the quantum mechanical properties of electrons and holes, and the IRF8252PBF can operate in both the enhancement mode and depletion mode.

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