Allicdata Part #: | IRL3303STRLPBF-ND |
Manufacturer Part#: |
IRL3303STRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 38A D2PAK |
More Detail: | N-Channel 30V 38A (Tc) 3.8W (Ta), 68W (Tc) Surface... |
DataSheet: | IRL3303STRLPBF Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 38A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 4.5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 870pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.8W (Ta), 68W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IRL3303STRLPBF is a power field-effect transistor (power MOSFET) produced by International Rectifier (IR). In order to improve its thermal characteristics, this power MOSFET has a low power version, the IRL3303STRLPBF, which offers good device performance without the need of heatsink or additional cooling mechanism.
The IRL3303STRLPBF is a single N-channel Power MOSFET and has a drain-source breakdown voltage of 30V. It has an on-resistance of 4.2 mΩ and with a drain current of 175A, the IRL3303STRLPBF is able to deliver a continuous power dissipation of up to 4W.
The IRL3303STRLPBF is widely used in applications such as DC/DC converters, automotive power supplies, industrial power supplies and battery charging. It is also suitable for many telecom applications such as power amplifier bias, power factor correction, reverse current protection and other critical applications.
The working principle of the IRL3303STRLPBF is quite simple. When a positive voltage is applied at the gate of the MOSFET, the depletion region at the drain-source junction increases. This results in an increase in the drain current, when a voltage is connected at the drain, which allows for an increase in the power dissipation of the device. The depletion-type of MOSFET is particularly suited for high-voltage applications, like the IRL3303STRLPBF, since the drain-source junction can withstand up to 30V without breaking down.
But since the IRL3303STRLPBF is a Power MOSFET, it is not suitable for digital applications since it has a high input capacitance and a low input impedance. Also, it has limited switching speed. But given its excellent thermal characteristics and current rating, it is the perfect device for applications such as DC/DC converters and automotive power supplies, where power dissipation and thermal loss are of utmost importance.
The IRL3303STRLPBF is an excellent choice for applications where high power dissipation and high current performance is demanded. It is also an ideal solution for applications where board size is critical and the need for additional cooling mechanism is eliminated, thanks to its superior thermal characteristics. Its small form factor, high current rating and high power dissipation make it ideal for many applications, from telecom to automotive to industrial.
The specific data is subject to PDF, and the above content is for reference
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