IRFR3504PBF Allicdata Electronics
Allicdata Part #:

IRFR3504PBF-ND

Manufacturer Part#:

IRFR3504PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 30A DPAK
More Detail: N-Channel 40V 30A (Tc) 140W (Tc) Surface Mount D-P...
DataSheet: IRFR3504PBF datasheetIRFR3504PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 140W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRFR3504PBF belongs to a popular line of short-channel power MOSFETs, that are typically used as load switches, DC-DC converters, point-of-loads, voltage regulators and other similar roles. The device is a low-cost, high-performance, high-speed NMOSFET that offers minimal cross-conduction and thermal resistance., Due to its exceptional current handling and fast switched times, this device is often used in a variety of industrial applications, as well as in consumer electronic applications.

The IRFR3504PBF MOSFET is a enhancement mode-type transistor. It consists of a three-terminal, metal-oxide-silicon (MOS) field-effect transistor (FET) made from silicon or gallium arsenide (GaAs). This device has an internal gate that enables the passing of electrical current with minimal interference from the device itself. The gate is connected to the source, drain, and bulk. When there is a gate voltage applied to the transistor, the electric field created between the drain and source will allow for current flow. The amount of current at the drain is determined by the amount of gate voltage applied to the transistor.

The IRFR3504PBF features a low On resistance that allows for high speed switching, improved power efficiency and incredibly small switch control. For applications that require high efficiency, the IRFR3504PBF offers a substantial improvement in power efficiency compared to less advanced transistors. The rise and fall times of the transistor are cut in half relative to the same MOSFET operating frequency, which allows for improved system dynamic response and faster switching times. Additionally, the low input capacitance of the device along with the fast switching capability ensures a high rate of performance.

The IRFR3504PBF is incredibly versatile and can be used in many different applications. As a load switch, it can be used to control the current flowing into an electrical circuit. By adjusting the gate voltage of the MOSFET, the current level can be changed with minimal effort. This can be useful in power supply design, where the rate at which current is allowed to flow into a device can be controlled with a single switch.

The IRFR3504PBF is also used for applications such as DC-DC converters, voltage regulators, and point-of-loads. These devices are responsible for regulating the voltage of a circuit, allowing the device to stay at its desired level of operation. The MOSFET helps to increase the efficiency of the design while also reducing cost.

In portable electronic products, such as portable phones, PDAs, and laptop computers, the IRFR3504PBF helps reduce the power consumed by these devices. As the device is switched off, the MOSFET switches can instantly turn off power to the device, reducing total power consumption. This is a crucial concept in portable electronic design, where power is a major issue.

The IRFR3504PBF is a versatile, low-cost, and high-performance MOSFET that is suited for a variety of applications. Its low On resistance, high speed switching, and high power efficiency make it an excellent choice for a variety of power supply designs, making it a popular choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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