SPB100N04S2L-03 Allicdata Electronics
Allicdata Part #:

SPB100N04S2L-03-ND

Manufacturer Part#:

SPB100N04S2L-03

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 100A D2PAK
More Detail: N-Channel 40V 100A (Tc) 300W (Tc) Surface Mount PG...
DataSheet: SPB100N04S2L-03 datasheetSPB100N04S2L-03 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Transistors - FETs, MOSFETs - Single

The SPB100N04S2L-03 is a N-Channel MOSFET manufactured by STMicroelectronics. It is primarily used for electron switching in power management applications, providing reduced output capacitance and low on-state resistance. This MOSFET is suitable for applications such as DC-DC converters, power amplifiers, portable devices, and power switches.

Application Field

The SPB100N04S2L-03 is typically used in DC-DC converters, switching mode power supplies, and power management applications. The device has a low drain-to-source capacitance and low on-state resistance, making it ideal for switching and electronic regulation applications. This MOSFET is also suitable for power switches and amplifiers in portable devices, such as mobile phones, tablets, and laptops.

Working Principle

The SPB100N04S2L-03 is a N-Channel MOSFET device that utilizes a vertical transistor design. This device features an N-channel enhancement field effect transistor in a double V-shaped DMOS configuration, giving it a reduced drain-to-source capacitance and low on-state resistance. The SPB100N04S2L-03 operates by applying a voltage between the drain and the gate of the device, which controls the flow of electrons in the channel between the source and the drain.

The SPB100N04S2L-03 features a maximum drain-source voltage of 100V, a continuous drain current of 4A, and an on-state resistance of 2.3mΩ. This MOSFET has excellent thermal and electrical characteristics and a high performance, making it a reliable electronic device. It is also available in a wide range of packages, allowing it to be used in a variety of applications.

Conclusion

The SPB100N04S2L-03 is a N-Channel MOSFET manufactured by STMicroelectronics. It is an ideal choice for applications in power management, including DC-DC converters and power switches in portable devices. This device offers low drain-to-source capacitance, low on-state resistance, and excellent thermal and electrical characteristics, giving it a high performance. The SPB100N04S2L-03 is available in a wide range of packages, allowing it to be used in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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