
Allicdata Part #: | SPB100N04S2L-03-ND |
Manufacturer Part#: |
SPB100N04S2L-03 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 100A D2PAK |
More Detail: | N-Channel 40V 100A (Tc) 300W (Tc) Surface Mount PG... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | PG-TO263-3-2 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 230nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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Transistors - FETs, MOSFETs - Single
The SPB100N04S2L-03 is a N-Channel MOSFET manufactured by STMicroelectronics. It is primarily used for electron switching in power management applications, providing reduced output capacitance and low on-state resistance. This MOSFET is suitable for applications such as DC-DC converters, power amplifiers, portable devices, and power switches.
Application Field
The SPB100N04S2L-03 is typically used in DC-DC converters, switching mode power supplies, and power management applications. The device has a low drain-to-source capacitance and low on-state resistance, making it ideal for switching and electronic regulation applications. This MOSFET is also suitable for power switches and amplifiers in portable devices, such as mobile phones, tablets, and laptops.
Working Principle
The SPB100N04S2L-03 is a N-Channel MOSFET device that utilizes a vertical transistor design. This device features an N-channel enhancement field effect transistor in a double V-shaped DMOS configuration, giving it a reduced drain-to-source capacitance and low on-state resistance. The SPB100N04S2L-03 operates by applying a voltage between the drain and the gate of the device, which controls the flow of electrons in the channel between the source and the drain.
The SPB100N04S2L-03 features a maximum drain-source voltage of 100V, a continuous drain current of 4A, and an on-state resistance of 2.3mΩ. This MOSFET has excellent thermal and electrical characteristics and a high performance, making it a reliable electronic device. It is also available in a wide range of packages, allowing it to be used in a variety of applications.
Conclusion
The SPB100N04S2L-03 is a N-Channel MOSFET manufactured by STMicroelectronics. It is an ideal choice for applications in power management, including DC-DC converters and power switches in portable devices. This device offers low drain-to-source capacitance, low on-state resistance, and excellent thermal and electrical characteristics, giving it a high performance. The SPB100N04S2L-03 is available in a wide range of packages, allowing it to be used in a variety of applications.
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