Allicdata Part #: | IRL1104STRLPBF-ND |
Manufacturer Part#: |
IRL1104STRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 104A D2PAK |
More Detail: | N-Channel 40V 104A (Tc) 2.4W (Ta), 167W (Tc) Surfa... |
DataSheet: | IRL1104STRLPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 104A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 62A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 4.5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 3445pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.4W (Ta), 167W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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FETs (Field Effect Transistors) have become one of the most essential components in electronic devices and circuits. Among them, single devices are the core, and IRL1104STRLPBF is a typical representative. This article will discuss its applications and working principles.
Applications of IRL1104STRLPBF
IRL1104STRLPBF is designed as an advanced power MOSFET, which provides a high level of efficiency and quality in an integrated package. It was developed to be used in general switching, voltage regulator and power conversion applications, such as PWM controllers, regulators, DC-DC converters and motor drivers. The optimized gate charge characteristics and low on-resistance can boost the efficiency in the range of 25% to 30%.
What is more, equipped with the ultra-low gate charge, the IRL1104STRLPBF also offers improved switching and switching speed. This would contribute to better light load efficiency and reduce current overshoot, making it suitable for appliances, powering home networks and charging devices. Furthermore, it can reduce power consumption by taking advantage of the low gate and drain capacitances.
Working Principle of IRL1104STRLPBF
The IRL1104STRLPBF has a basic MOSFET configuration with three pins- the source, gate, and drain. It works on the principle of an insulated gate bipolar transistor (IGBT) that combines the benefits of voltage regulation and switching. When the gate voltage is applied, the current flow from the source to the drain is controlled via a MOSFET channel. The gate-to-source voltage (Vgs) controls the MOSFETs current conduction ability and is called the “channel width.”
The power output of the IRL1104STRLPBF is determined by its operating temperature, channel width, and drain-to-source voltages (Vds). The power dissipation of the device is defined by its maximum current conduction capability and die temperature, and therefore power inefficiency can result in higher heat output. In order to maintain optimal performance, proper cooling is important as heat dissipation must be considered when designing a system.
The IRL1104STRLPBF can be used in various types of applications that require high levels of power, including DC power supplies and high power devices like lighting and motors. Its impressive power capability makes it an ideal choice for applications where high efficiency, low energy consumption, and low heat output are essential.
Conclusion
In conclusion, the IRL1104STRLPBF is an advanced power MOSFET that can provide high efficiency, low power consumption, and low heat output in a variety of applications. Its channel width and drain-to-source voltages control the device’s power output, and its gate charge characteristics make it suitable for power conversion, voltage regulation, and motor driving applications. Proper cooling is necessary to maintain optimal performance and reduce power inefficiency.
The specific data is subject to PDF, and the above content is for reference
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