
Allicdata Part #: | BSS84PL6433HTMA1TR-ND |
Manufacturer Part#: |
BSS84PL6433HTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 60V 170MA SOT-23 |
More Detail: | P-Channel 60V 170mA (Ta) 360mW (Ta) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 20µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 19pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 1.5nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 8 Ohm @ 170mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 170mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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Introduction
BSS84PL6433HTMA1 is a high-speed vertical DMOS transistor, usually used as a power switch in computers, telecommunications and consumer electronics. The power rating is 80W and the operating temperature range is -65 ° C to +150 ° C. This type of transistor also features low on-state drain-source resistance and low gate charge.
Application Field
BSS84PL6433HTMA1 is mainly used in digital power supply applications, such as personal computers, laptops, cell phones and TV set-top boxes. It also finds applications in automotive electronic throttle control, electronic fuel injection, as well as digital air conditioning and refrigeration control.
BSS84PL6433HTMA1 is also suitable for applications requiring high switching frequency, such as solenoid and motor control, liquid level sensors, robot actuators and high speed drive circuits.
Working Principle
BSS84PL6433HTMA1 is a vertical DMOS transistor, which employs the common source configuration. In this configuration, the source is connected to the ground, the drain is connected to the load, and the gate is connected to the input signal. As the input signal is applied to the gate, the current flows through the channel region, between the source and the drain. The on-state drain-source resistance and current gain can both be adjusted by varying the gate voltage. With the increasing of the gate voltage, the channel width will be increased, leading to higher current gains and lower on-state drain-source resistances.
The transistor also features a high-frequency (HF) mode. In this mode, the channel length is significantly reduced and the capacitances between the drain and the gate, or between the source and the gate are significantly lowered. This leads to a higher switching frequency and a resulting reduction in power consumption. In practice, this mode is often employed in high-load applications.
Conclusion
BSS84PL6433HTMA1 is a vertical DMOS transistor which is mainly used for digital power supply applications and high-load applications. It is also suitable for applications requiring high switching frequency, such as solenoid and motor control. With the increase of gate voltage, it can reduce its on-state drain-source resistance and increase its current gain. It also features a high-frequency (HF) mode, which helps to reduce the power consumption by increasing the switching frequency.
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