IRFH7934TR2PBF Discrete Semiconductor Products

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IRFH7934TR2PBF is a N-channel Enhancement Mode MOSFET transistor manufactured by Infineon Technologies. It comes in the form of a small, surface-mount package and is designed for high-frequency, high-power DC-DC converters and other power amplifier applications. This type of transistor is part of the Enhancer FETS series, which make up a group of devices characterized by their low drain-source ON-resistance, high breakdown voltage, and current handling capabilities. The IRFH7934TR2PBF can be used as a power amplifier, motor control, and DC-DC converter, or in any other application where a small-signal FET is needed.

The IRFH7934TR2PBF is a single N-channel MOSFET featuring an extremely low total gate-charge (TGQ) of 590nC and an 8 Volt gate-to-source voltage (VGS) rating. With a drain current rating of 6.7A and a total chip area of just 2.3mm2, this device is ideal for applications where low power consumption and small package size are paramount. Thanks to its low gate charge and on-resistance, this MOSFET enables high efficiency when used in applications such as switching, blocking, or voltage clamping.

The IRFH7934TR2PBF is suitable for use in DC-DC converters, battery packs, portable devices, and consumer electronics where a small size and high-power handling are important. It can also be used in automotive applications such as ECUs and switch modes, and in home automation applications.

The working principle of the IRFH7934TR2PBF is based on the ‘bulk effect’ of the MOSFET. This effect is achieved by the structure of the MOSFET chip which is composed of a source, a drain, and a gate. The source provides a low impedance path to the drain and the gate is used to control the flow of the drain current by changing the voltage across the drain-source. The gate voltage (VGS) can be increased or decreased, depending on the desired outcome – whether the current should flow or not. When the gate voltage is higher than the source voltage, the MOSFET is ‘on’ and the current can flow. When the gate voltage is lower than the source voltage, the MOSFET is ‘off’ and the current cannot flow. This type of operation is known as ‘Enhancement Mode’.

In summary, the IRFH7934TR2PBF is a single N-channel MOSFET transistor designed for high-frequency, high-power DC-DC converters and other power amplifier applications. It features an extremely low total gate-charge and an 8V gate-to-source voltage rating and is suitable for a wide range of applications where small package size, low power consumption, and high power handling capabilities are required.

The IRFH7934TR2PBF is an ideal choice for building efficient power amplifiers, motor controllers and DC-DC converters. The working principle of the device is based on the ‘bulk effect’ of the MOSFET, and it can be used for a variety of applications where a small-signal FET is needed.

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