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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
TLP197GFTR-ND	TLP197G(TP,F)	Toshiba Semiconductor and Storage	View more Series: TLP197G Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.15VDC Voltage - Load: 0V ~ 350V Load Current: 120mA On-State Resistance (Max): 35 Ohms Termination Style: Gull Wing Package / Case: 6-SOP (0.173", 4.40mm) Supplier Device Package: 6-SOP (2.54mm)	1000 Order	2500+: $0.8143 5000+: $0.7995
CUS15I30A(TE85L QM-ND	CUS15I30A(TE85L ,QM	Toshiba Semiconductor and Storage	View more Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 460mV @ 1.5A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 60A @ 30V Capacitance @ Vr, F: 50pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: US-FLAT (1.25x2.5) Operating Temperature - Junction: 150C (Max)	1000 Order	4000+: $0.0862
TRS6E65CS1AQ-ND	TRS6E65C,S1AQ	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Not For New Designs Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 90A @ 650V Capacitance @ Vr, F: 35pF @ 650V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175C (Max)	1000 Order	50+: $4.0683
TK5A60D(STA4QM) -ND	TK5A60D(STA4,Q, M)	Toshiba Semiconductor and Storage	View more Series: -MOSVII Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.43 Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Power Dissipation (Max): 35W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	1000 Order	50+: $0.9169
TL1L4-NW0L4A5BT R-ND	TL1L4-NW0,L4A5B	Toshiba Semiconductor and Storage	View more Series: LETERAS Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 2 (1 Year) Color: White, Cool CCT (K): 5000K Flux @ 85C, Current - Test: 150 lm (140 lm ~ 160 lm) Current - Test: 350mA Voltage - Forward (Vf) (Typ): 2.8V Lumens/Watt @ Current - Test: 153 lm/W CRI (Color Rendering Index): 70 Current - Max: 1.5A Viewing Angle: 120 Mounting Type: Surface Mount Package / Case: 1414 (3535 Metric) Supplier Device Package: 3535 Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm) Height - Seated (Max): 0.085" (2.15mm) Thermal Resistance of Package: 5C/W	1000 Order	1+: $0
TK31E60XS1X-ND	TK31E60X,S1X	Toshiba Semiconductor and Storage	View more Series: DTMOSIV-H Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 88 mOhm @ 9.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 230W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	1000 Order	1+: $3.7611 50+: $3.0222 100+: $2.7536 500+: $2.2297 1000+: $1.8805
TPCA8011-H(TE12 LQM-ND	TPCA8011-H(TE12 LQM	Toshiba Semiconductor and Storage	View more Series: U-MOSIII-H Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 200A Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	--
CUS10S30H3FTR-N D	CUS10S30,H3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 230mV @ 100mA Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 500A @ 30V Capacitance @ Vr, F: 135pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125C (Max)	6000 Order	3000+: $0.0423 6000+: $0.0381 15000+: $0.0339 30000+: $0.0318 75000+: $0.0282
TLP267J(TPLE-ND	TLP267J(TPL,E	Toshiba Semiconductor and Storage	View more Part Status: Active Output Type: Triac Zero Crossing Circuit: No Number of Channels: 1 Voltage - Isolation: 3750Vrms Voltage - Off State: 600V Static dV/dt (Min): 500V/s (Typ) Current - LED Trigger (Ift) (Max): 3mA Current - On State (It (RMS)) (Max): 70mA Current - Hold (Ih): 200A (Typ) Turn On Time: 100s Voltage - Forward (Vf) (Typ): 1.27V Current - DC Forward (If) (Max): 30mA Operating Temperature: -40C ~ 100C Approvals: CQC, cUR, UR	1000 Order	3000+: $0.2134
TLP5752(TPETR-N D	TLP5752(TP,E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 35kV/s Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Rise / Fall Time (Typ): 15ns, 8ns Current - Output High, Low: 2.5A, 2.5A Current - Peak Output: 2.5A Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 15 V ~ 30 V Operating Temperature: -40C ~ 110C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Supplier Device Package: 6-SO Approvals: CQC, CSA, cUL, UL	1000 Order	1500+: $0.6927 3000+: $0.655 7500+: $0.6298
TLP5774(E-ND	TLP5774(E	Toshiba Semiconductor and Storage	View more Part Status: Active Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 35kV/s Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Rise / Fall Time (Typ): 15ns, 8ns Current - Output High, Low: 1.2A, 1.2A Current - Peak Output: 4A Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 8mA Voltage - Supply: 10 V ~ 30 V Operating Temperature: -40C ~ 110C Approvals: CQC, cUR, UR, VDE	1000 Order	125+: $0.9563
TLP5774(D4E-ND	TLP5774(D4,E	Toshiba Semiconductor and Storage	View more Part Status: Active Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 35kV/s Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Rise / Fall Time (Typ): 15ns, 8ns Current - Output High, Low: 1.2A, 1.2A Current - Peak Output: 4A Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 8mA Voltage - Supply: 10 V ~ 30 V Operating Temperature: -40C ~ 110C Approvals: CQC, cUR, UR, VDE	1000 Order	125+: $0.9841
TLP293(GR-TPLET R-ND	TLP293(GR-TPL,E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 300% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 4-SOIC (0.179", 4.55mm Width) Supplier Device Package: 4-SO	1000 Order	2500+: $0.0983 5000+: $0.0894 12500+: $0.0834 25000+: $0.0805 62500+: $0.0775
DF10G5M4NLFTR-N D	DF10G5M4N,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Bidirectional Channels: 4 Voltage - Reverse Standoff (Typ): 3.6V (Max) Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 24V Current - Peak Pulse (10/1000s): 2A (8/20s) Power - Peak Pulse: 30W Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Mounting Type: Surface Mount Package / Case: 10-UFDFN Supplier Device Package: 10-DFN (2.5x1)	6000 Order	3000+: $0.0764 6000+: $0.0718 15000+: $0.0671 30000+: $0.0617
DF5A6.2F(TE85LF )TR-ND	DF5A6.2F(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Unidirectional Channels: 4 Voltage - Reverse Standoff (Typ): 3V Voltage - Breakdown (Min): 5.8V Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 55pF @ 1MHz Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	1000 Order	3000+: $0.0542 6000+: $0.0488 15000+: $0.0434 30000+: $0.0407 75000+: $0.0362
JDV2S07FSTPL3TR -ND	JDV2S07FSTPL3	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard - Single Voltage - Peak Reverse (Max): 10V Capacitance @ Vr, F: 4.9pF @ 1V, 1MHz Operating Temperature: 150C (TJ) Package / Case: 2-SMD, Flat Lead Supplier Device Package: fSC	1000 Order	1+: $0
TPCF8107LFCT-ND	TPCF8107,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2V @ 100A Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): +20V, -25V Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 10V Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: VS-8 (2.9x1.5) Package / Case: 8-SMD, Flat Lead	1000 Order	1+: $0
2SJ438Q(J-ND	2SJ438,Q(J	Toshiba Semiconductor and Storage	View more Series: * Packaging: Bulk Part Status: Obsolete Mounting Type: Through Hole Supplier Device Package: TO-220NIS Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
CRZ22(TE85L,Q)- ND	CRZ22(TE85L,Q)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Voltage - Zener (Nom) (Vz): 22V Tolerance: 10% Power - Max: 700mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 10A @ 16V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -40C ~ 150C Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Base Part Number: CRZ22	1000 Order	1+: $0
SSM6P41FE(TE85L F)TR-ND	SSM6P41FE(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 720mA Rds On (Max) @ Id, Vgs: 300 mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.76nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Power - Max: 150mW Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6) Base Part Number: SSM6P41	4000 Order	4000+: $0.0777
TLP160G(UF)-ND	TLP160G(U,F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Output Type: Triac Zero Crossing Circuit: No Number of Channels: 1 Voltage - Isolation: 2500Vrms Voltage - Off State: 400V Static dV/dt (Min): 200V/s Current - LED Trigger (Ift) (Max): 10mA Current - On State (It (RMS)) (Max): 70mA Current - Hold (Ih): 600A (Typ) Turn On Time: 30s Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 50mA Operating Temperature: -40C ~ 100C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Supplier Device Package: 6-MFSOP, 4 Lead Approvals: UR	1000 Order	1+: $0
TODX2355(F)-ND	TODX2355(F)	Toshiba Semiconductor and Storage	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Data Rate: 10Mbps Moisture Sensitivity Level (MSL): 1 (Unlimited) Wavelength: 650nm Applications: General Purpose Voltage - Supply: 4.75 V ~ 5.25 V Connector Type: JIS F07 Mounting Type: Through Hole	164 Order	1+: $10.3509 10+: $9.9086 25+: $7.7064 100+: $6.6056 250+: $6.2753 500+: $5.945 1000+: $5.6147
TLP179DF-ND	TLP179D(F)	Toshiba Semiconductor and Storage	View more Series: TLP179D Packaging: Bulk Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.15VDC Voltage - Load: 0V ~ 200V Load Current: 50mA On-State Resistance (Max): 50 Ohms Termination Style: Gull Wing Package / Case: 4-SOP (0.173", 4.40mm) Supplier Device Package: 4-SOP (2.54mm)	1000 Order	1+: $0.8001 10+: $0.7516 25+: $0.6678 50+: $0.6344 100+: $0.601 300+: $0.5342 500+: $0.5009 1000+: $0.4675 5000+: $0.4508
TOTX1353(VF)-ND	TOTX1353(V,F)	Toshiba Semiconductor and Storage	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Wavelength: 650nm Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Forward (Vf) (Typ): 1.75V Current - DC Forward (If) (Max): 30mA Connector Type: TOSLINK	88 Order	1+: $8.8704 10+: $8.4911 25+: $6.6039 100+: $5.6606 250+: $5.3775 500+: $5.0945 1000+: $4.8115
TK6Q60WS1VQ-ND	TK6Q60W,S1VQ	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 820 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 3.7V @ 310A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 60W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Stub Leads, IPak	1000 Order	75+: $1.0596
DF2B6.8EL3FTR-N D	DF2B6.8E,L3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Bidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 5V (Max) Voltage - Breakdown (Min): 5.8V Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 15pF @ 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC	8000 Order	8000+: $0.0357 16000+: $0.0318 24000+: $0.0298 56000+: $0.0265
TL1L4-DW0LCS-ND	TL1L4-DW0,LCS	Toshiba Semiconductor and Storage	View more Series: LETERAS Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 2A (4 Weeks) Color: White, Cool CCT (K): 6500K Flux @ 85C, Current - Test: 145 lm (130 lm ~ 160 lm) Current - Test: 350mA Voltage - Forward (Vf) (Typ): 2.8V Lumens/Watt @ Current - Test: 148 lm/W CRI (Color Rendering Index): 70 Current - Max: 1.5A Viewing Angle: 120 Mounting Type: Surface Mount Package / Case: 1414 (3535 Metric) Supplier Device Package: 3535 Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm) Height - Seated (Max): 0.085" (2.15mm) Thermal Resistance of Package: 5C/W	1000 Order	1+: $0
TLP2630F-ND	TLP2630(F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 2 Inputs - Side 1/Side 2: 2/0 Voltage - Isolation: 2500Vrms Common Mode Transient Immunity (Min): 200V/s, 500V/s (Typ) Input Type: DC Output Type: Open Collector, Schottky Clamped Current - Output / Channel: 16mA Data Rate: 10MBd Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Rise / Fall Time (Typ): 30ns, 30ns Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40C ~ 85C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	3332 Order	1+: $1.6002 10+: $1.4181 50+: $1.052 100+: $0.9148 250+: $0.8233 500+: $0.7318 1000+: $0.6289 2500+: $0.5946 5000+: $0.5717
TLP626BVF-ND	TLP626(BV,F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 1mA Current Transfer Ratio (Max): 1200% @ 1mA Turn On / Turn Off Time (Typ): 10s, 8s Rise / Fall Time (Typ): 8s, 8s Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 55V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 400mV Operating Temperature: -55C ~ 100C Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: 4-DIP	6848 Order	1+: $1.0521 10+: $0.8562 25+: $0.6585 100+: $0.5925 300+: $0.5267 500+: $0.4477 1000+: $0.3687 2500+: $0.3502 5000+: $0.3423
TLP155EE-ND	TLP155E(E)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 15kV/s Propagation Delay tpLH / tpHL (Max): 170ns, 170ns Rise / Fall Time (Typ): 35ns, 15ns Current - Output High, Low: 400mA, 400mA Current - Peak Output: 600mA Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 10 V ~ 30 V Operating Temperature: -40C ~ 100C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Supplier Device Package: 6-SO, 5 Lead Approvals: CSA, cUL, UL	23 Order	--
RFM08U9X(TE12LQ )CT-ND	RFM08U9X(TE12L, Q)	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Transistor Type: N-Channel Frequency: 520MHz Gain: 11.7dB Voltage - Test: 9.6V Current Rating: 5A Current - Test: 50mA Power - Output: 7.5W Voltage - Rated: 36V Package / Case: TO-271AA Supplier Device Package: PW-X	803 Order	1+: $5.2542 10+: $4.7282 100+: $3.8876 500+: $3.2572
TK62N60XS1F-ND	TK62N60X,S1F	Toshiba Semiconductor and Storage	View more Series: DTMOSIV-H Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 61.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 40 mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3.1mA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 400W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	705 Order	1+: $7.4151 30+: $6.082 120+: $5.4886 510+: $4.5986
SSM3K345RLFTR-N D	SSM3K345R,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 33 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	6000 Order	3000+: $0.0587
SSM3J352FLFTR-N D	SSM3J352F,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Rds On (Max) @ Id, Vgs: 110 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 10V Power Dissipation (Max): 1.2W (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: S-Mini Package / Case: TO-236-3, SC-59, SOT-23-3	3000 Order	3000+: $0.0623
SSM6N48FURF(D-N D	SSM6N48FU,RF(D	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100A Input Capacitance (Ciss) (Max) @ Vds: 15.1pF @ 3V Power - Max: 300mW Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	1+: $0
TK31V60W5LVQTR- ND	TK31V60W5,LVQ	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 109 mOhm @ 15.4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V Power Dissipation (Max): 240W (Tc) Operating Temperature: 150C (TA) Mounting Type: Surface Mount Supplier Device Package: 4-DFN-EP (8x8) Package / Case: 4-VSFN Exposed Pad	1000 Order	2500+: $1.3538
2SK2883(TE24L,Q )-ND	2SK2883(TE24L,Q )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Power Dissipation (Max): 75W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-220SM Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
TK16A55D(STA4QM )-ND	TK16A55D(STA4,Q ,M)	Toshiba Semiconductor and Storage	View more Series: -MOSVII Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25C: 16A (Ta) Rds On (Max) @ Id, Vgs: 330 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
1SS388(TL3FD)-N D	1SS388(TL3,F,D)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 50mA Speed: Small Signal = Current - Reverse Leakage @ Vr: 5A @ 10V Capacitance @ Vr, F: 18pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC Operating Temperature - Junction: -40C ~ 100C	1000 Order	1+: $0
TK5A55D(STA4QM) -ND	TK5A55D(STA4,Q, M)	Toshiba Semiconductor and Storage	View more Series: -MOSVII Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V Power Dissipation (Max): 35W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	1000 Order	50+: $0.8114

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