SSM6P41FE(TE85L,F) Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SSM6P41FE (TE85L, F) is an array type field effect transistor (FET) with a wide range of applications. It is designed to provide reliable high performance in a wide range of environments, from automotive to consumer electronics. The SSM6P41FE is a semiconductor device composed of two types of metal-oxide-semiconductor (MOS) transistor cells that are connected in parallel. It is constructed as an integrated circuit, with the whole package sealed in a small size module.

The SSM6P41FE is a type of large-signal complex application Field Eliminated Transistor (FET). The FET operates by using field-induced channel modulation to control the current flow between the source and the drain. It is designed to operate in either positive or zero-gate-voltage mode, allowing for higher switching speeds and lower power consumption than traditional bi-polar transistors.

The SSM6P41FE has several advantages over other FETs, such as its extremely low on-state resistance, wide dynamic range, and low power consumption capabilities. It also offers excellent thermal stability and reliability. The FET\'s wide array of applications stems from its versatile design that allows for several different types of configurations. This includes single and multiple cell arrays that are used in power control and switching of high frequency digital waveforms, such as in smartphone LCD displays.

The SSM6P41FE is a self-biased FET, which means that the drain is biased by itself against the gate voltage. The drain is also internally connected to ground to reduce the on-state resistance. The SSM6P41FE has two interchangeable terminals at each of the four corners, which can be used as either the source, drain, or gate. This feature is especially beneficial when it is used in circuits that require ultra-fast switching speed and higher voltage.

The SSM6P41FE is based on a special dual MOSFET technology, allowing for higher densities and higher efficiencies. The array provides improved performance compared to single-cell FETs and is easily scalable for higher power. The FET has an integrated, self-biased switch that operates at high speeds and is suitable for both AC and DC applications. The switching performance is excellent, with very low switching noise and reduced switching losses.

The SSM6P41FE also provides several safety features, such as over-current protection, short-circuit protection, and reverse-voltage protection. The FET also has an excellent thermal coupling capability that allows for reliable and safe operation in a variety of industrial and automotive applications. Its small size is also beneficial in applications where space is a constraint.

The SSM6P41FE is a versatile, high-performance array FET that is suitable for a wide range of applications. Its features include low power consumption, thermal stability, and reliable performance. The FET is an excellent choice for applications that require fast switching speeds, high voltages, and reliable operation.

The specific data is subject to PDF, and the above content is for reference