Allicdata Part #: | SSM6N48FURF(D-ND |
Manufacturer Part#: |
SSM6N48FU,RF(D |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET 2N-CH 30V 0.1A |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 100mA (Ta) 300... |
DataSheet: | SSM6N48FU,RF(D Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate, 2.5V Drive |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Rds On (Max) @ Id, Vgs: | 3.2 Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: | 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 15.1pF @ 3V |
Power - Max: | 300mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | US6 |
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SSM6N48FU,RF is a vertical DMOS power transistor array that is typically used in power management systems and battery management applications. The device has eight channels consisting of four N-Channel MOSFETs and four P-Channel MOSFETs. The device features integrated gate drivers within the array, allowing for improved efficiency and power saving compared to discrete arrangements. The device also has configuration options that allow users to control the power levels and current ranges according to their specific needs.
Application fields
The SSM6N48FU,RF is used in a variety of power management applications including power supply sequencing, battery management, and power converter applications. The integrated gate drivers in the array allow for improved efficiency and power savings compared to discrete designs, making it ideal for power sensitive applications. The device can also be used to control the power levels in a noisy environment, as the integrated gate drivers reduce the risk of interference from other electronic components. The device is also suitable for applications in hybrid vehicles, alternative energy sources, and general industrial control applications.
Working Principle
The SSM6N48FU,RF device is a vertical DMOS power transistor array. It consists of eight channels, each with four N-Channel MOSFETs and four P-Channel MOSFETs. The integrated gate drivers within the array allow for improved efficiency and power savings compared to discrete designs. The gate drivers allow for the rapid switching of the MOSFETs, allowing for improved efficiency and reduced power consumption. The device also has configuration options that allow user-controlled power levels and current ranges for specific needs.
When the SSM6N48FU,RF device is used in a power management application, it begins by recognizing the input voltage and matches it against the desired output. The integrated gate drivers then use the input voltage to control the MOSFETs which in turn, allows for the appropriate current to be delivered to the output. The gate drivers are also responsible for controlling the power levels within the device allowing users to configure the device to their specific needs.
In summary, the SSM6N48FU,RF is a vertical DMOS power transistor array used in a variety of power management applications. The integrated gate drivers allow for improved efficiency and power savings compared to discrete designs. The device also has configuration options that allow for user-controlled power levels and current ranges for specific needs. The device is ideal for applications in hybrid vehicles, alternative energy sources, and general industrial control applications.
The specific data is subject to PDF, and the above content is for reference
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