Storage logic trigger - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
RN2310LFTR-ND	RN2310,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	1000 Order	3000+: $0.0202
RN1964TE85LFTR- ND	RN1964TE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	1+: $0
RN1901FETE85LFT R-ND	RN1901FETE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	1000 Order	1+: $0
SSM6L16FETE85LF TR-ND	SSM6L16FETE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Not For New Designs FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 100mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 0.1mA Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Power - Max: 150mW Operating Temperature: 150C (TA) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	1000 Order	4000+: $0.0753
RN1401LFTR-ND	RN1401,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini Base Part Number: RN140*	9000 Order	3000+: $0.0243 6000+: $0.0212 15000+: $0.018 30000+: $0.0169 75000+: $0.0159 150000+: $0.0141
TK560P60YRQTR-N D	TK560P60Y,RQ	Toshiba Semiconductor and Storage	View more Series: DTMOSV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 560 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 240A Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 300V Power Dissipation (Max): 60W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2000+: $0.3885
2SA1312GRTE85LF TR-ND	2SA1312GRTE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 100MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	1000 Order	1+: $0
2SD2206(T6CNOAF )-ND	2SD2206(T6CNO,A ,F)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A Current - Collector Cutoff (Max): 10A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
TLP250H(D4-LF1F )-ND	TLP250H(D4-LF1, F)	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 40kV/s Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 2.5A Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Rise / Fall Time (Typ): 50ns, 50ns Voltage - Forward (Vf) (Typ): 1.57V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 10 V ~ 30 V Operating Temperature: -40C ~ 125C	1000 Order	50+: $0.797
TLP358(TP1F)-ND	TLP358(TP1,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 20kV/s Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Pulse Width Distortion (Max): 250ns Rise / Fall Time (Typ): 17ns, 17ns Current - Output High, Low: 5A, 5A Current - Peak Output: 6A Voltage - Forward (Vf) (Typ): 1.57V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 15 V ~ 30 V Operating Temperature: -40C ~ 100C Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Supplier Device Package: 8-SMD Approvals: cUL, UL	1000 Order	1+: $0
TLP2168(TPF)TR- ND	TLP2168(TP,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 2 Inputs - Side 1/Side 2: 2/0 Voltage - Isolation: 2500Vrms Common Mode Transient Immunity (Min): 15kV/s Input Type: DC Output Type: Open Collector Current - Output / Channel: 25mA Data Rate: 20MBd Propagation Delay tpLH / tpHL (Max): 60ns, 60ns Rise / Fall Time (Typ): 30ns, 30ns Voltage - Forward (Vf) (Typ): 1.57V Current - DC Forward (If) (Max): 25mA Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40C ~ 125C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	1000 Order	1+: $0
TLP293(GRL-TPLE TR-ND	TLP293(GRL-TPL, E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 500A Current Transfer Ratio (Max): 200% @ 500A Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 4-SOIC (0.179", 4.55mm Width) Supplier Device Package: 4-SO	1000 Order	2500+: $0.1006
TLP385(D4-GRE-N D	TLP385(D4-GR,E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 300% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C	1000 Order	125+: $0.1996
TC62D776CFGELTR -ND	TC62D776CFG,EL	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Type: Linear Topology: Shift Register Internal Switch(s): Yes Number of Outputs: 16 Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Voltage - Output: 17V Current - Output / Channel: 90mA Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 24-SOP (0.236", 6.00mm Width) Supplier Device Package: 24-SSOP	1000 Order	1+: $0
TPCP8103-H(TE85 LFMTR-ND	TPCP8103-H(TE85 LFM	Toshiba Semiconductor and Storage	View more Series: U-MOSIII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 4.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 40 mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Power Dissipation (Max): 840mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PS-8 (2.9x2.4) Package / Case: 8-SMD, Flat Lead	1000 Order	1+: $0
2SJ438Q(M-ND	2SJ438,Q(M	Toshiba Semiconductor and Storage	View more Series: * Packaging: Bulk Part Status: Obsolete Mounting Type: Through Hole Supplier Device Package: TO-220NIS Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
1SS383(TE85LF)T R-ND	1SS383(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 100mA Speed: Small Signal = Current - Reverse Leakage @ Vr: 5A @ 40V Operating Temperature - Junction: 125C (Max) Mounting Type: Surface Mount Package / Case: SC-82 Supplier Device Package: USQ	1000 Order	1+: $0
1SS397TE85LFTR- ND	1SS397TE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 1A @ 400V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70 Operating Temperature - Junction: 125C (Max)	1000 Order	1+: $0
SSM3K361RLFTR-N D	SSM3K361R,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 69 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100A Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 15V Power Dissipation (Max): 1.2W (Ta) Operating Temperature: 175C Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	1000 Order	3000+: $0.1235
3SK291(TE85LF)T R-ND	3SK291(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: N-Channel Dual Gate Frequency: 800MHz Gain: 22.5dB Voltage - Test: 6V Current Rating: 30mA Noise Figure: 2.5dB Current - Test: 10mA Voltage - Rated: 12.5V Package / Case: SC-61AA Supplier Device Package: SMQ	1000 Order	1+: $0
2SJ360(TE12L,F) -ND	2SJ360(TE12L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 730 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 10V Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: PW-MINI Package / Case: TO-243AA	1000 Order	1+: $0
DF2S30CTL3FTR-N D	DF2S30CT,L3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Unidirectional Channels: 1 Voltage - Reverse Standoff (Typ): 23V Voltage - Breakdown (Min): 28V Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 7.2pF @ 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: CST2	10000 Order	10000+: $0.0172 30000+: $0.0155 50000+: $0.0138 100000+: $0.0129 250000+: $0.0115
DF5A6.8LFLFTR-N D	DF5A6.8LF,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Unidirectional Channels: 4 Voltage - Reverse Standoff (Typ): 5V Voltage - Breakdown (Min): 6.5V Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 6pF @ 1MHz Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	1 Order	3000+: $0.0423 6000+: $0.0381 15000+: $0.0339 30000+: $0.0318 75000+: $0.0282
TLP351(TP1F)-ND	TLP351(TP1,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 10kV/s Propagation Delay tpLH / tpHL (Max): 700ns, 700ns Rise / Fall Time (Typ): 50ns, 50ns Current - Output High, Low: 400mA, 400mA Current - Peak Output: 600mA Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 10 V ~ 30 V Operating Temperature: -40C ~ 100C Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Supplier Device Package: 8-SMD	1000 Order	1500+: $0.4075
TB6560AHQ-ND	TB6560AHQ	Toshiba Semiconductor and Storage	View more Packaging: Tray Part Status: Preliminary Motor Type - Stepper: Bipolar Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: Power MOSFET Step Resolution: 1, 1/2, 1/4, 1/8, 1/16 Applications: General Purpose Current - Output: 3A Voltage - Supply: 4.5 V ~ 5.5 V Voltage - Load: 4.5 V ~ 34 V Operating Temperature: -30C ~ 85C (TA) Mounting Type: Through Hole Package / Case: 25-SIP Formed Leads Supplier Device Package: 25-HZIP	1000 Order	--
TB62779FNGELTR- ND	TB62779FNG,EL	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Type: Linear Internal Switch(s): Yes Number of Outputs: 9 Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Voltage - Output: 4V Current - Output / Channel: 40mA Dimming: PWM Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 20-LSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-SSOP	1000 Order	1+: $0
RN2405LF-ND	RN2405,LF	Toshiba Semiconductor and Storage	View more Part Status: Active Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	1000 Order	3000+: $0.0243
RN1964FE(TE85LF )TR-ND	RN1964FE(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	4000 Order	4000+: $0.0441
HN1A01FE-YLFTR- ND	HN1A01FE-Y,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	8000 Order	4000+: $0.0397 8000+: $0.0357 12000+: $0.0318 28000+: $0.0298 100000+: $0.0265
RN4609(TE85LF)T R-ND	RN4609(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	1000 Order	1+: $0
2SC2235-YT6ASHF (J-ND	2SC2235-Y,T6ASH F(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
TPN14006NHL1QTR -ND	TPN14006NH,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Rds On (Max) @ Id, Vgs: 14 mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4V @ 200A Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 30V Power Dissipation (Max): 700mW (Ta), 30W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	5000+: $0.225
1SV270TPH3FTR-N D	1SV270TPH3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Capacitance @ Vr, F: 8.7pF @ 4V, 1MHz Capacitance Ratio: 2 Capacitance Ratio Condition: C1/C4 Voltage - Peak Reverse (Max): 10V Diode Type: Single Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Base Part Number: 1SV270	3000 Order	3000+: $0.0873
1SS387L3FTR-ND	1SS387,L3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Capacitance @ Vr, F: 3pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC Operating Temperature - Junction: 125C (Max) Base Part Number: 1SS387	64000 Order	8000+: $0.0225 16000+: $0.0191 24000+: $0.018 56000+: $0.0169 200000+: $0.015
CES520L3FTR-ND	CES520,L3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Small Signal = Current - Reverse Leakage @ Vr: 5A @ 30V Capacitance @ Vr, F: 17pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC Operating Temperature - Junction: 125C (Max) Base Part Number: CES520	8000 Order	8000+: $0.0183 16000+: $0.0159 24000+: $0.0143 56000+: $0.0127 200000+: $0.0106
CUS15S40H3FTR-N D	CUS15S40,H3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 200A @ 40V Capacitance @ Vr, F: 170pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125C (Max)	3000 Order	3000+: $0.0463 6000+: $0.0417 15000+: $0.037 30000+: $0.0347 75000+: $0.0309
TK45P03M1RQ(S-N D	TK45P03M1,RQ(S	Toshiba Semiconductor and Storage	View more Series: U-MOSVI-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 22.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 200A Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	1+: $0
TBAW56LMTR-ND	TBAW56,LM	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Configuration: 1 Pair Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 215mA Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOT-23-3 Flat Leads Supplier Device Package: SOT-23-3	1000 Order	3000+: $0.0236 6000+: $0.0213 15000+: $0.0185 30000+: $0.0167 75000+: $0.0148 150000+: $0.0123
CRH02(TE85LQM)- ND	CRH02(TE85L,Q,M )	Toshiba Semiconductor and Storage	View more Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 950mV @ 500mA Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10A @ 200V Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150C (Max)	1000 Order	3000+: $0.0666
1SS302TE85LFTR- ND	1SS302TE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Operating Temperature - Junction: 125C (Max) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	1000 Order	1+: $0

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