RN1964FE(TE85L,F) Discrete Semiconductor Products

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The RN1964FE(TE85L,F) is a Pre-Biased Bipolar Junction Transistor (BJT) Arrays designed specifically to provide high current gain. It comes in two packages: the TE85L, which is a five-pin leadless chip carrier, and the TE85F, which is a four-pin chip carrier. While the RN1964FE is designed to provide high current gain, its main feature is that it has been pre-biased, so it is much easier to use than other transistors.

The RN1964FE is suitable for high-performance, low-power amplifier circuits and oscillator circuits. It has a minimum gain of 100, a maximum collector-emitter voltage of 30V, and a maximum drain current of -150mA. Its small size and extremely low power consumption make it suitable for a wide range of applications, such as radio frequency receivers, small signal amplifiers, and audio equipment.

In addition to its pre-bias feature, the RN1964FE has some unique characteristics that make it one of the most impressive BJT arrays on the market. The RN1964FE is designed to reduce the effects of thermal runaway, a condition in which the collector current increases exponentially with an increase in the collector-base voltage. This is done by adding a resistor-capacitor (RC) network to the transistor\'s base, which reduces the collector-base voltage.

The RN1964FE also has excellent power dissipation characteristics, allowing it to be used in a wide range of applications. The collector-emitter breakdown voltage is rated at 30V, making it suitable for high voltages. The gain bandwidth product is 1MHz - its high frequency performance makes it a great choice for audio equipment and other high-frequency applications.

The RN1964FE works by combining two junction diodes, one p-type and one n-type, which form a common-base transistor. This transistor is then connected to other components, such as resistors and capacitors, which create the desired circuit. When electricity starts flowing, the diodes allow either an n-type or a p-type current to flow, depending on the direction of the current. This current then interacts with the other components in the circuit to create the desired output.

The RN1964FE is a great choice for applications that require high current gain and low power dissipation. Its pre-bias feature makes it easy to use, while its thermal runaway protection ensures that it is a reliable component. Its high frequency performance makes it suitable for audio equipment and other high-frequency applications, while the collector-emitter breakdown voltage ensures that it can be used in high voltage circuits. This makes the RN1964FE a great BJT array choice for a variety of applications.

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