Allicdata Part #: | RN1901FETE85LFTR-ND |
Manufacturer Part#: |
RN1901FETE85LF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2NPN PREBIAS 0.1W ES6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | RN1901FETE85LF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | 250MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | ES6 |
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The RN1901FETE85LF is a Pre-Biased Bipolar Junction Transistor (BJT) array. It is composed of two integrated transistors with the same form factor and both exhibiting important features that make them ideal for a wide array of applications. This type of transistor array is a crucial element in many electronic circuits, from isolation stages all the way to audio applications.
The basic structure of a BJT array consists of two transistors with a common base, integrated into a single package. This type of transistor array is chosen mainly due to its reduced size compared to using two separate transistors, and its potential for increasing the overall efficiency of the circuit.
The RN1901FETE85LF transistor array is composed of two NPN transistors, with their base interconnected. This gives the array an integrated pre-biased solution, which is convenient because it means it can be used without the need of an additional resistor. This transistor array has two terminals and requires a single supply voltage for its operation. Its integrated pre-biased feature makes it ideal for small LED driver circuits.
The working principle of the RN1901FETE85LF is quite simple. Because of its pre-biased design, the two transistors are already active and can conduct the current directly. When an input is supplied to the array, the current passes through the transistors and the current can be potentially doubled. This is why the integrated pre-biased design is so useful for small LED driver circuits, because it greatly increases the efficiency of the circuit.
The RN1901FETE85LF is used in a variety of applications, such as audio systems, audio amplifiers, optoelectronic systems, and small LED driver circuits. It is also used in isolation stages and logic circuits, although its pre-biased nature makes it especially suitable for small LED driver circuits due to its potential for increasing the efficiency of the circuit.
Due to its integrated pre-biased nature, the RN1901FETE85LF is a great choice for small LED driver circuits. It allows for a significant increase in circuit efficiency, due to its potent ability to double the current that can be supplied to the circuit. Its two terminals and single supply voltage also make it simple and convenient to use in such applications. This integrated pre-biased design makes the RN1901FETE85LF a great choice for a wide array of applications.
The specific data is subject to PDF, and the above content is for reference
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