SSM3K361R,LF Allicdata Electronics
Allicdata Part #:

SSM3K361RLFTR-ND

Manufacturer Part#:

SSM3K361R,LF

Price: $ 0.14
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 100V 3.5A SOT-23F
More Detail: N-Channel 100V 3.5A (Ta) 1.2W (Ta) Surface Mount S...
DataSheet: SSM3K361R,LF datasheetSSM3K361R,LF Datasheet/PDF
Quantity: 1000
3000 +: $ 0.12353
Stock 1000Can Ship Immediately
$ 0.14
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Package / Case: SOT-23-3 Flat Leads
Supplier Device Package: SOT-23F
Mounting Type: Surface Mount
Operating Temperature: 175°C
Power Dissipation (Max): 1.2W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Series: U-MOSVIII-H
Rds On (Max) @ Id, Vgs: 69 mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SSM3K361R,LF is a single polar MOSFET, popularly used in many applications. Its main feature is a low-voltage gate-to-source control event rating of 2.5V for a range of operating voltages up to 18V. This device is comprised of a number of components, including three mosfets and one or two capacitors. Each mosfet is designed to help regulate the flow of current, while the capacitors store energy and help to regulate the voltage. The SSM3K361R,LF is often used in applications such as small logic circuits, power management, and other low-power devices.

The SSM3K361R,LF is an example of a field effect transistor (FET). FETs are electronic devices that are used to control the flow of electric current. They are used to amplify, switch, and regulate signals. FETs work by controlling the conductive properties of a semiconductor material, such as silicon, through the application of a voltage or electric field. FETs have three terminals and are constructed using either a n-type or p-type semiconductor material. The terminals are labelled the source, the gate, and the drain. The source and drain connect to the semiconductor material, while the gate is connected to an external voltage.

The working principle of the SSM3K361R,LF works by applying a voltage at the gate terminal. The voltage polarizes the FET and creates an electric field. This electric field affects the conductivity of the semiconductor material and controls the flow of current between the source and the drain. The strength of this electric field is proportional to the voltage applied to the gate, allowing precise control over the amount of current flowing through the device.

The SSM3K361R,LF is a versatile device and is used in many different applications. It is often used in digital logic circuits as it is compatible with CMOS logic. It can be used to switch signals in circuit design, act as a low-power amplifier, or regulate voltage. It is also used in power management circuits, particularly in those involving switching between a high power state and a low power state. Additionally, it is used to control the voltage in low-power circuits, such as battery-powered devices.

The SSM3K361R,LF is an invaluable component in many electrical systems. Its high performance, versatility, and low voltage control make it an ideal candidate for a wide range of applications in the electronics industry.

The specific data is subject to PDF, and the above content is for reference

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