Allicdata Part #: | 2SC4793(LBSANFM)-ND |
Manufacturer Part#: |
2SC4793(LBSAN,F,M) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 1A 230V TO220-3 |
More Detail: | Bipolar (BJT) Transistor NPN 230V 1A 100MHz 2W Thr... |
DataSheet: | 2SC4793(LBSAN,F,M) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 230V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 5V |
Power - Max: | 2W |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220NIS |
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The 2SC4793(LBSAN,F,M) transistor is an NPN bjt (Bipolar Junction Transistor) single that can be used for power amplification for low voltage and low frequency circuits. It is available in some packages which allows increased power handling capability. This device has the advantage of excellent hFE gain flatness, improved high frequency performance, lower gate current, higher collector-emitter saturation voltage, etc.
In terms of application fields, the 2SC4793(LBSAN,F,M) is widely used in areas such as communications, electronic instruments, motor control, CCTV, etc. This device can also be used in power switching applications as it is capable of handling high currents. Furthermore, the 2SC4793(LBSAN,F,M) is widely used in various analog and digital circuits, such as audio power amplifiers, power supplies, operational amplifier circuits, etc.
In terms of working principle, the 2SC4793(LBSAN,F,M) is a 3-terminal semiconductor device which can be used to amplify or switch electrical signals or currents. It operates by regulating the current flow through a base current, which then controls the amount of current that passes through the collector-emitter junction. The current gain of a transistor is called the hFE gain and this is determined by the ratio of the collector current to the base current. The hFE gain of the 2SC4793(LBSAN,F,M) is very good, allowing for increased gain flatness and improved high frequency performance.
Other features of the 2SC4793(LBSAN,F,M) include its high current capability, low gate current and high collector-emitter saturation voltage, which make it well suited to power switching applications. The device is also capable of operating at high frequencies, allowing it to be used in RF circuits. The device is available in a few packages which can help to increase its power handling capability.
In summary, the 2SC4793(LBSAN,F,M) is an NPN bjt single which can be used for power amplification for low voltage and low frequency circuits. It is widely used in applications such as communications, electronic instruments, motor control, CCTV and analog and digital circuits. The device operates by regulating a base current which then controls the current passing through the collector-emitter junction. The 2SC4793(LBSAN,F,M) has the advantage of excellent hFE gain flatness, improved high frequency performance, lower gate current and higher collector-emitter saturation voltage.
The specific data is subject to PDF, and the above content is for reference
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