AS4C512M8D3-12BIN

Series:	--
Packaging:	Tray
Part Status:	Discontinued at Digi-Key
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - DDR3
Memory Size:	4Gb (512M x 8)
Clock Frequency:	800MHz
Write Cycle Time - Word, Page:	15ns
Access Time:	20ns
Memory Interface:	Parallel
Voltage - Supply:	1.425 V ~ 1.575 V
Operating Temperature:	-40°C ~ 95°C (TC)
Mounting Type:	Surface Mount
Package / Case:	78-TFBGA
Supplier Device Package:	78-FBGA (9x10.5)

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AS4C512M8D3-12BIN Memory

AS4C512M8D3-12BIN memory is a type of high-performance synchronous dynamic random access memory (SDRAM) which is used to store data in digital devices. It is widely used in many industries such as telecommunications, medical equipment, military, embedded systems and aerospace.In terms of its physical structure, the AS4C512M8D3-12BIN has an 8-pin single in-line package (SIP) with a footprint of 28×7.8mm. It is powered with a 3.3V voltage supply and is offered in two cycle times, 12ns and 15ns. The device also has an integrated controller that runs at an operating frequency of up to 133MHz.In terms of its performance parameters, the AS4C512M8D3-12BIN can handle up to 33 million instructions per second (MIPS) and up to 199 million data transfers per second (MP/s). It has an outstanding responsiveness with CAS latency of 2 clocks and system throughput of up to 1.6GB/s. Additionally, the device is temperature-hardened to withstand temperatures up to 85℃.The primary application of the AS4C512M8D3-12BIN memory is in digital devices such as computers, smartphones, digital cameras, gaming consoles, as well as high-end embedded applications. It is mostly used in applications that require dependability, speed and stability such as in high-end medical equipment, military and aerospace.The working principle of the AS4C512M8D3-12BIN memory is to provide a high-performance solution for data processing and storage. It is a synchronous dynamic random access memory (SDRAM) device that provides a high performance synchronous interface. The GDDR1,2,3 and 5 memory is organized in 16, 32 and 64-bit data buses with very low power and high bandwidth. It provides a high-speed connection between the processor and the memory and allows for burst data transfer rates to increase the efficiency of data access and reduce the amount of time required to access the memory. The device also supports multiple data paths and can handle multiple tasks simultaneously. The AS4C512M8D3-12BIN memory device is a very powerful tool with various of features in terms of its performance, data access, power and temperature characteristics. It has the advantage of being a low-cost solution while providing great performance and reliability in digital systems.

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