AS4C16M16D1A-5TIN Allicdata Electronics
Allicdata Part #:

1450-1282-ND

Manufacturer Part#:

AS4C16M16D1A-5TIN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 256M PARALLEL 66TSOP II
More Detail: SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 20...
DataSheet: AS4C16M16D1A-5TIN datasheetAS4C16M16D1A-5TIN Datasheet/PDF
Quantity: 38
Stock 38Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 256Mb (16M x 16)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Memory Interface: Parallel
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP II
Description

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Memory is a vital component in the vast majority of computing applications, ranging from smartphone to supercomputers. AS4C16M16D1A-5TIN is a type of static random access memory (SRAM) specifically designed to provide rapid and reliable data storage solutions across a variety of different applications. This article will provide an overview of the AS4C16M16D1A-5TIN’s application field and its working principle.

Application Field

The AS4C16M16D1A-5TIN is designed to operate in a wide range of different applications and environments. It is ideal for use in embedded applications, such as automotive systems and mobile phones, as the memory is housed in a small, low-profile package, which makes it ideal for these types of applications. It is also suitable for networking applications, such as routers and switches, due to its low-power operation and excellent signal integrity. Moreover, AS4C16M16D1A-5TIN is suitable for both mobile and desktop applications, such as gaming consoles and computers, due to its high data transfer rates and fast start-up times.

Working Principle

The working principle of the AS4C16M16D1A-5TIN is based on the use of static random access memory (SRAM). SRAM is a type of high-speed, volatile memory that stores information in a fixed pattern of cells, each of which contains a bit of data. Unlike dynamic random access memory (DRAM), SRAM does not require a constant refresh rate, which makes it more efficient for applications that require large amounts of data storage and rapid, reliable access. The AS4C16M16D1A-5TIN utilizes 6T-SRAM (six transistor static random access memory) technology to allow a denser and more reliable cache, which significantly increases its data retrieval speed and reduces power consumption compared to conventional SRAM technology.

In terms of its operation, the AS4C16M16D1A-5TIN performs read and write operations with a 144ns access time. It also features a burst mode operation, which allows multiple consecutive read and write operations to be performed without having to issue a new command. This makes it ideal for applications that require high-bandwidth operations. Additionally, the AS4C16M16D1A-5TIN includes an error-correction feature, which can recover data that has been corrupted due to hardware or software activities. This improves the reliability of the memory and provides a higher level of protection for data stored on the SRAM.

In summary, the AS4C16M16D1A-5TIN is a highly versatile static random access memory (SRAM) solution that is specifically designed to provide fast and reliable data storage for a wide range of applications. It utilizes 6T-SRAM technology to increase its data retrieval speed and reduce power consumption. Furthermore, the AS4C16M16D1A-5TIN includes a burst mode operation and an error-correction feature, making it ideal for applications that require high-bandwidth operations and reliable data protection.

The specific data is subject to PDF, and the above content is for reference

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