AS4C4M16SA-7BCN Allicdata Electronics
Allicdata Part #:

1450-1261-ND

Manufacturer Part#:

AS4C4M16SA-7BCN

Price: $ 1.68
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 64M PARALLEL 54TFBGA
More Detail: SDRAM Memory IC 64Mb (4M x 16) Parallel 143MHz 5.4...
DataSheet: AS4C4M16SA-7BCN datasheetAS4C4M16SA-7BCN Datasheet/PDF
Quantity: 331
1 +: $ 1.53090
10 +: $ 1.37907
25 +: $ 1.35702
50 +: $ 1.35349
100 +: $ 1.20935
348 +: $ 1.17006
696 +: $ 1.16570
1044 +: $ 1.08565
5220 +: $ 0.98232
Stock 331Can Ship Immediately
$ 1.68
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (4M x 16)
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: 2ns
Access Time: 5.4ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AS4C4M16SA-7BCN is a type of Dynamic Random Access Memory (DRAM) device. This device is a synchronous, single-bank 4Meg x 16bits-wide memory chip. It is designed for high-density memory applications and is capable of generic RAM operation.

This device is built using very high-density CMOS process technology, and its DRAM cells are organized in dense multi-level architectures. It has an advanced ASIC architecture for high-speed operation. The AS4C4M16SA-7BCN provides low power consumption and high performance. It also has enhanced data integrity and refresh capabilities for long term reliability.

The AS4C4M16SA-7BCN has a variety of applications in computer and communications systems, including microcontrollers, robots, medical electronics, network routers and other embedded systems. It is also used in digital signal processing and image/video processing systems. The AS4C4M16SA-7BCN is typically used in applications that require fast access to large amount of data, such as in multi-media systems, medical imaging, and gaming consoles.

The working principle of the AS4C4M16SA-7BCN is fairly straightforward. When the chip is powered, it will read and write data to and from the DRAM cells. When the write command is given, the chip will write data to the DRAM cells. This process is repeated for every write command. Similarly, when the chip receives a read command, the chip will read data from the DRAM cells. The data is then sent to the output lines of the chip, thus completing the read/write cycle.

To ensure data reliability, error checking and correction (ECC) is employed on the AS4C4M16SA-7BCN. ECC is a system which looks for data errors caused by bit corruption and then attempts to correct them. This helps the chip to maintain data integrity for prolonged periods of time.

In addition, the AS4C4M16SA-7BCN also employs data refresh techniques to ensure that the DRAM cells are not neglected over time. Data refresh is a process where data is sent through the DRAM cells periodically to keep them refreshed and avoid data loss. This ensures that the chip retains data for long periods of time.

The AS4C4M16SA-7BCN is a powerful DRAM device that is capable of providing high-speed and reliable data access for a range of applications. Its low power consumption, high performance and error correction features, as well as its data refresh techniques all contribute to its ability to provide reliable operation even in extreme conditions. As such, it is an ideal choice for embedded systems, medical electronics and many other applications.

The specific data is subject to PDF, and the above content is for reference

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