AS4C128M16D3LA-12BIN

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AS4C128M16D3LA-12BIN is a typical static random access memory (SRAM) product from Alliance Memory. It is used in various applications in computing, communications and industrial fields. In this article, its application field and working principle will be discussed in details.

Application Field

AS4C128M16D3LA-12BIN is a highly integrated SRAM product that is ideal for a wide range of applications. It is well suited for embedded applications requiring low power consumption and fast access times. The device has a clock frequency up to 100MHz and a data transfer rate up to 10Mbps. It also provides low power operation, wide operating temperature range, low active current and excellent voltage regulation.

AS4C128M16D3LA-12BIN is perfect for high density embedded designs. It is a dual-voltage device, providing both 3.3V and 1.8V supplies. This device is designed to minimize system power consumption, making it ideal for battery operated wireless applications. It offers both byte write protection and byte control functions. It is also capable of providing higher system performance than an SRAM of the same size.

The most typical applications of AS4C128M16D3LA-12BIN are digital devices, such as digital audio/video, digital imaging, digital assembly, digital printing and digital display systems. It is also suitable for various other memory applications in industrial, automotive, aerospace and military systems.

Working Principle

SRAM products like AS4C128M16D3LA-12BIN are composed of a number of memory cells connected together.Each memory cell consists of four transistors which stores the data as the voltage state of a capacitor.The cells are organized in a matrix of rows and columns, with the columns connected to data bits and the rows connected to address bits.The data is stored or retrieved from each cell by selecting the appropriate row and column.

When the memory is powered up, the cell capacitors are discharged, so all the memory cells are reset to their initial values. When a row is selected, the capacitors in all the cells in that row are charged. When a column is selected, the data from the selected cell is read. The data can be written to the cell by writing to the selected row and data bit.

AS4C128M16D3LA-12BIN is a static RAM, which means that the stored data does not need to be refreshed. Since the capacitors do not need to be recharged constantly, SRAMs consume less power than DRAMs. This is an important consideration in power-sensitive applications.

Conclusion

AS4C128M16D3LA-12BIN is a high performance static RAM that provides excellent performance in a variety of applications. It offers low power consumption and wide operating temperature range, making it ideal for embedded applications. The device is easy to use, and its operation is based on a simple structure of four transistors and capacitors.

The specific data is subject to PDF, and the above content is for reference