AS4C512M8D3A-12BCN

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AS4C512M8D3A-12BCN is a registered trademark of Alliacne Memory, Inc., and is a component consisting of a synchronous dynamic random access memory (SDRAM). As a dynamic random access memory (DRAM), AS4C512M8D3A-12BCN stores data in an array of small, memory cells integrated onto a single chip and is usually used for mission-critical applications.

Application Field

AS4C512M8D3A-12BCN is mainly used in embedded systems, network and communication applications, servers, workstations and personal computers that require mission-critical performance and reliability.

AS4C512M8D3A-12BCN is also used in automotive, telecommunications and transportation applications. It is used in a variety of devices, such as digital TVs, personal media players, digital cameras, game consoles, embedded controllers, and digital signage.

Working Principle

At the heart of the AS4C512M8D3A-12BCN is a synchronous DRAM (SDRAM) memory cell. Each memory cell consists of two transistors, a capacitor, and a bit line. When power is applied, the transistor of each cell is switched on, allowing a static charge to be applied to the capacitor. When a control signal is applied, the capacitor charges or discharges. This process is known as refreshing. The state of each cell can be read from the bit line.

The AS4C512M8D3A-12BCN utilizes an internal 4-bit prefetch architecture that allows for a single data phase to be performed in less than 4 clock cycles. This greatly reduces the overall latency of memory accesses and also enables higher power efficiency by utilizing shorter clock cycles.

The AS4C512M8D3A-12BCN also utilizes an error correction code (ECC) to detect and corrects single-bit memory errors. This allows the memory module to achieve higher reliability and data integrity.

Furthermore, the AS4C512M8D3A-12BCN utilizes an innovative power management feature that minimized idle power consumption and enables automatic power-down (APD) when the memory is not in use. This helps to reduce power consumption and extend the life of the memory module.

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