Allicdata Part #: | 1450-1329-ND |
Manufacturer Part#: |
AS4C64M8D1-5TIN |
Price: | $ 3.03 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Alliance Memory, Inc. |
Short Description: | IC DRAM 512M PARALLEL 66TSOP II |
More Detail: | SDRAM - DDR Memory IC 512Mb (64M x 8) Parallel 200... |
DataSheet: | AS4C64M8D1-5TIN Datasheet/PDF |
Quantity: | 60 |
1 +: | $ 2.75310 |
10 +: | $ 2.49921 |
25 +: | $ 2.44490 |
50 +: | $ 2.43142 |
108 +: | $ 2.18056 |
324 +: | $ 2.17243 |
540 +: | $ 2.09243 |
1080 +: | $ 1.98936 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR |
Memory Size: | 512Mb (64M x 8) |
Clock Frequency: | 200MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 700ps |
Memory Interface: | Parallel |
Voltage - Supply: | 2.3 V ~ 2.7 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 66-TSSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 66-TSOP II |
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Memory is a vital aspect of computing. One critical component is the AS4C64M8D1-5TIN. This memory device is used in a variety of applications, as it is a reliable, cost-effective solution. Memory devices are also used in various ways, including storing data and running applications. With the AS4C64M8D1-5TIN, this is possible at a fraction of the power and space requirement compared to other memory solutions.
Application Field
The AS4C64M8D1-5TIN is used in a range of applications, including embedded systems, industrial control, mobile devices and communication. As the memory device is low-power and high-capacity, it provides the ideal solution for these applications. For example, embedded systems can benefit from the AS4C64M8D1-5TIN by using its low-power, high-capacity memory to store data and process tasks efficiently. This allows the system to run faster and more reliably as there is no need to continually refresh memory allocations.
In industrial control, the AS4C64M8D1-5TIN is used in applications where memory demands are more demanding than traditional memories. This is due to the lower power requirements and ability to store large amounts of data at once. This makes the device an ideal choice for mission-critical and safety-critical industrial applications. For example, the AS4C64M8D1-5TIN can be used to store product plans or operating instructions. In addition, the device is perfect for controlling and managing automated systems like industrial robots.
The AS4C64M8D1-5TIN is also used in mobile devices and communication. Many mobile devices rely on memory to store data, such as contacts, photos and applications. By using the low-power and high-capacity device, mobile devices can perform tasks faster and with less power. This reduces battery consumption and allows mobile devices to run longer. Additionally, the device is perfect for communication applications, such as VoIP, streaming, and gaming, as it is able to store large amounts of data quickly and efficiently.
Working Principle
The AS4C64M8D1-5TIN utilizes DRAM, or Dynamic Random Access Memory, to store data. DRAM is a type of memory that stores data in a series of memory cells. This allows data to be stored and accessed quickly and simultaneously. DRAM is more efficient than other memory technologies, as data can be stored in the same physical space without needing to be reloaded each time it is accessed.
The device works by placing voltage onto a series of memory cells in an analog manner. This voltage represents the value that is stored in the memory cells. When these values are accessed, they are converted into digital data, which can then be read and written. The AS4C64M8D1-5TIN is able to store 64 megabits of data in one device and can operate at low power.
The AS4C64M8D1-5TIN is also unique in that it utilizes Embedded DRAM, or eDRAM. This type of memory does not require an external memory controller and is implemented directly in the device. This allows for faster access times and reduced power consumption. Furthermore, eDRAM is also more resistant to noise, vibration, and temperature change, making it perfect for use in automotive, military, and medical applications.
Overall, the AS4C64M8D1-5TIN is an ideal memory solution for a variety of applications. It is a low-power, high-capacity, and reliable solution for embedded systems, industrial control, mobile devices, and communication. Furthermore, it utilizes DRAM and eDRAM, making it a cost-effective, versatile option. With the AS4C64M8D1-5TIN, users can expect smooth and reliable operation at a fraction of the power and space requirements of other memory solutions.
The specific data is subject to PDF, and the above content is for reference
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AS4C1M16S-7TCN | Alliance Mem... | -- | 1380 | IC DRAM 16M PARALLEL 50TS... |
AS4C1M16S-6TIN | Alliance Mem... | 1.48 $ | 385 | IC DRAM 16M PARALLEL 50TS... |
AS4C4M16SA-6TCN | Alliance Mem... | -- | 58 | IC DRAM 64M PARALLEL 54TS... |
AS4C4M16SA-7BCN | Alliance Mem... | 1.68 $ | 331 | IC DRAM 64M PARALLEL 54TF... |
AS4C64M8D1-5TIN | Alliance Mem... | 3.03 $ | 60 | IC DRAM 512M PARALLEL 66T... |
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AS4C2M32SA-6TIN | Alliance Mem... | 2.88 $ | 97 | IC DRAM 64M PARALLEL 86TS... |
AS4C64M8D2-25BAN | Alliance Mem... | 4.34 $ | 48 | IC DRAM 512M PARALLEL 60F... |
AS4C1M16S-7TCNTR | Alliance Mem... | 0.98 $ | 1000 | IC DRAM 16M PARALLEL 50TS... |
AS4C1M16S-6TCNTR | Alliance Mem... | 0.98 $ | 1000 | IC DRAM 16M PARALLEL 50TS... |
AS4C4M16SA-7TCNTR | Alliance Mem... | 1.04 $ | 1000 | IC DRAM 64M PARALLEL 54TS... |
AS4C8M16SA-7TCN | Alliance Mem... | -- | 5350 | IC DRAM 128M PARALLEL 54T... |
AS4C8M16SA-6TIN | Alliance Mem... | -- | 13102 | IC DRAM 128M PARALLEL 54T... |
AS4C16M16SA-6BIN | Alliance Mem... | 3.63 $ | 4691 | IC DRAM 256M PARALLEL 54T... |
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AS4C32M16SB-7TINTR | Alliance Mem... | 7.42 $ | 4000 | IC DRAM 512M PARALLEL 54T... |
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