AS4C128M8D3LA-12BCN Allicdata Electronics
Allicdata Part #:

1450-1437-ND

Manufacturer Part#:

AS4C128M8D3LA-12BCN

Price: $ 3.47
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 1G PARALLEL 78FBGA
More Detail: SDRAM - DDR3L Memory IC 1Gb (128M x 8) Parallel 80...
DataSheet: AS4C128M8D3LA-12BCN datasheetAS4C128M8D3LA-12BCN Datasheet/PDF
Quantity: 242
1 +: $ 3.15630
10 +: $ 2.86524
25 +: $ 2.80274
50 +: $ 2.78725
100 +: $ 2.49965
250 +: $ 2.49034
500 +: $ 2.39863
1000 +: $ 2.28049
Stock 242Can Ship Immediately
$ 3.47
Specifications
Series: --
Packaging: Tray 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gb (128M x 8)
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Memory Interface: Parallel
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-FBGA (10.5x8)
Description

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AS4C128M8D3LA-12BCN is popularly used in many high-performance memory applications. This memory is typically used in automotive applications, medical equipment, industrial automation, and military applications. It offers low latency, fast data transfer rate, and a high level of reliability.

The chip is based on the DDR3 SODIMM standard and is designed to provide speeds of up to 1866MHz. It features 8 independent DRAM devices that can be configured for use as either 128Mb or 256Mb devices. Each device is a dual-channel device, meaning each channel can be independently programmed and operated for high speed data transfer.

For optimal application performance, the AS4C128M8D3LA-12BCN is designed with very low latency. The latency of the DDR3 devices is just 6ns and the latency of the SODIMM devices is just 8ns. This combination of latency and high speed performance makes the AS4C128M8D3LA-12BCN an excellent choice for applications where fast data transfer is required.

The AS4C128M8D3LA-12BCN uses advanced pre-charge and write-equalization techniques to provide excellent data retention. These techniques help to ensure the data stored in the chips is not lost due to accidental power disruption or corrupted due to noise. Additionally, the chip has on-die ECC support for error correction during operation.

Finally, the chip\'s overall power consumption is extremely low due to its high speed operation. The AS4C128M8D3LA-12BCN has a typical power consumption of just 2W when operating at its maximum speed. This makes it an ideal memory solution for energy-sensitive applications.

In conclusion, the AS4C128M8D3LA-12BCN memory is an ideal solution for applications that demand high speed and reliability. Thanks to its low latency, fast data transfer rate, and high level of reliability, the AS4C128M8D3LA-12BCN is an excellent choice for automotive, medical, industrial, and military applications. Moreover, its low power consumption makes it an ideal solution for energy-sensitive applications.

The specific data is subject to PDF, and the above content is for reference

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