AS4C512M8D3L-12BIN

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Memory

The AS4C512M8D3L-12BIN is a type of memory module designed for embedded applications. It is an 8-bit synchronous low-power memory module with a maximum data rate of 12ns. It is used mainly in embedded systems with low power consumption requirements. It is also used in applications such as data caching, data buffering, image processing, and signal processing.

Features and Specifications

The AS4C512M8D3L-12BIN is a low power 8-bit Synchronous DRAM (SDRAM) memory module. It has a synchronization mode that allows it to operate at a maximum data rate of 12ns. It is ideally suited for applications that require low-power operation, such as data caching, data buffering, image processing, and signal processing. It is available in several density levels from 2Mb to 512Mb.

The module has a 3.3V power supply, an 8-bit IO port, and an 8-bit data bus. It is a synchronous device and requires a clock to operate. The clock frequency can range from 0MHz to 33MHz depending on the application.

The AS4C512M8D3L-12BIN has several features such as Memory Refresh Counter (MRC), Data Latency Mask (DLC), Pre-Charge Counter, Write Data Recovery Time (WDRT), Refresh Timer, and Partial Array Self-Refresh (PASR). It also supports Enhanced Data Self-Refresh (EDSR) and Refresh Under Exit Power-Down (REPD).

Application Field and Working Principle

The AS4C512M8D3L-12BIN is mainly used in embedded systems with low power requirements. It is ideal for image processing, signal processing, data caching, and data buffering applications. It is a synchronous device, so it requires a clock to operate. The clock signal is provided by the system’s logic to control the flow of data through the device.

The AS4C512M8D3L-12BIN is designed to work with the Memory Refresh Counter (MRC). This counter is used to ensure that data is refreshed in the SDRAM at a given period. It also provides the data latency mask (DLC), which is used to determine the time between memory access cycles. The Pre-Charge Counter is used to control the refreshed of data in the memory. The Write Data Recovery Time (WDRT) is used to control the time between write and read operations.

The module also has a Refresh Timer, which is used to calculate the optimal time for refreshing data in the memory. The Partial Array Self-Refresh (PASR) is used to reduce the power consumption during memory refresh operations. The module also supports Enhanced Data Self-Refresh (EDSR) and Refresh Under Exit Power-Down (REPD) modes. These modes are used to further reduce power consumption while keeping the data in the memory refreshed.

The AS4C512M8D3L-12BIN is a low power memory module designed for embedded applications. It is ideal for applications that require fast refresh operations, such as image and signal processing. It has several features such as MRC, DLC, WDRT, and PASR. It is also capable of operating in EDSR and REPD modes, which further reduce its power consumption.

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