Allicdata Part #: | APT29F100L-ND |
Manufacturer Part#: |
APT29F100L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1000V 30A TO264 |
More Detail: | N-Channel 1000V 30A (Tc) 1040W (Tc) Through Hole T... |
DataSheet: | APT29F100L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Package / Case: | TO-264-3, TO-264AA |
Supplier Device Package: | TO-264 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1040W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 460 mOhm @ 16A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The APT29F100L is a silicon N-channel enhancement Mode Field Effect Transistor (MOSFET). It is a “low-Qg” MOSFET, which means that its gate-charge is lower than typical MOSFETs. This makes the APT29F100L a cost-effective choice for certain applications.
The APT29F100L offers a number of features which make it useful in a wide variety of applications. Its low-Qg feature lowers its conduction losses, and its high-current rating make it suitable for power switching, such as DC motor control, DC/DC converter control, and drive circuits for power amplifiers. Its high-dV/dt capability made it ideal for high-speed switching applications.
The APT29F100L is a single-channel MOSFET, which means that it only has one channel for current. As a result, it is most effective for applications that require switching of a single load. In these applications, the APT29F100L can be used to switch loads that consume a large amount of current, such as high-wattage motors, power amplifiers, or DC/DC converters.
The APT29F100L operates as a normally-off MOSFET, meaning that current can only flow through the device when a voltage is applied to the gate. When a positive voltage is applied to the gate, current begins to flow through the channel, allowing the load to be powered. When the voltage is removed, the device turns off and current stops flowing.
In addition to its low Qg and high performance switching, the APT29F100L also features high-dV/dt immunity and low input capacitance, making it suitable for use in applications that require fast switching and high noise immunity. It is also able to handle high voltage and large current ratings, making it suitable for use in power applications. Finally, it has a breakdown voltage of 600V, which is enough for most applications.
In summary, the APT29F100L is a silicon N-channel enhancement Mode Field Effect Transistor (MOSFET) which is suitable for many applications due to its low-Qg, high-current rating, high-dV/dt capability, and high breakdown voltage. It is most suitable for power switching applications, such as DC motor control, DC/DC converter control, and drive circuits for power amplifiers, as well as fast switching applications that require high noise immunity.
The specific data is subject to PDF, and the above content is for reference
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