Allicdata Part #: | APT21M100J-ND |
Manufacturer Part#: |
APT21M100J |
Price: | $ 21.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1000V 21A SOT-227 |
More Detail: | N-Channel 1000V 21A (Tc) 462W (Tc) Chassis Mount I... |
DataSheet: | APT21M100J Datasheet/PDF |
Quantity: | 11 |
1 +: | $ 19.52370 |
10 +: | $ 18.05830 |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | ISOTOP® |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 462W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
Series: | POWER MOS 8™ |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 16A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The APT21M100J is a type of MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor. This type of transistor has the ability to switch high current with very low input power, making it an ideal choice for applications that require low power consumption and efficient power management. The main purpose of the APT21M100J is to provide a range of high-current ratings for low-current switching, providing an excellent way to manage complex circuit applications.
The APT21M100J works on a simple principle. In any electrical circuit, electricity will flow from an area of high voltage to an area of low voltage, similar to how water will flow from a high pressure point to a low pressure point. When a voltage is applied to the “gate” of the MOSFET, it creates an electric field in the body of the transistor. This electric field, or “gate voltage”, serves to control the flow of electrons in the circuit.
When the gate voltage is positive, the flow of electrons is “on”, while when the gate voltage is negative, the flow of electrons is “off”. The APT21M100J is designed to provide a very low amount of input power to switch between on and off states. This design allows for very efficient power management with minimal power wastage.
In addition to the low power requirements, APT21M100J is designed to be especially resilient against fluctuations in current, which makes it ideal for applications that require sensitive current control. The transistor is constructed from silicon, making it ideal for extreme temperatures, and it can endure up to 6.5A of continuous current, with a peak current of up to 10A.
Due to its wide variety of operating temperature ranges and low input power requirements, APT21M100J is used in a range of applications. These include automotive applications, industrial applications, and consumer electronics. In automotive applications, the transistor is used to control power distribution, while in industrial applications, it can be used to control motors, solenoids, and relays. In consumer electronics, the APT21M100J is used to control power in a range of products, including cell phones and computers.
The APT21M100J is a highly versatile MOSFET that is used in a range of applications. Its low power requirements and high current ratings make it an ideal choice for applications that require efficient power management and reliable current control. Furthermore, its ability to withstand extreme temperatures makes the APT21M100J a popular choice for a variety of applications, from automotive and industrial applications to consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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