1N5615GP-E3/73 Allicdata Electronics
Allicdata Part #:

1N5615GP-E3/73-ND

Manufacturer Part#:

1N5615GP-E3/73

Price: $ 0.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 200V 1A DO204AC
More Detail: Diode Standard 200V 1A Through Hole DO-204AC (DO-1...
DataSheet: 1N5615GP-E3/73 datasheet1N5615GP-E3/73 Datasheet/PDF
Quantity: 1000
6000 +: $ 0.10551
Stock 1000Can Ship Immediately
$ 0.12
Specifications
Series: Automotive, AEC-Q101, Superectifier®
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 500nA @ 200V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Description

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The 1N5615GP-E3/73 is categorized as a single rectifier diode that is primarily used in linear power supplies and switch mode power supplies. It is also suitable for lighting and existing applications. It provides a switching current of 1.5 amps and a peak current of 2.1 amps, allowing it to be suitable for medium and large power supplies. In addition, it also has a low and reverse current which are 0.02 amps and 0.9 volts respectively.

The 1N5615GP-E3/73 is also known as an ultra low forward voltage diode which is suitable for many existing and future applications. It offers a very low forward voltage rating of 0.8V and a total capacitance of just 50pF, which makes it suitable for switching applications. In addition, it has a reverse leakage current of 0.02A and a forward current of 1.2A, allowing for greater switching performance.

The working principle of the 1N5615GP-E3/73 is based on an N-channel MOSFET (NMOS) junction. It is capable of conducting a voltage of up to 1.2A and has a total capacitance of 50pF. The NMOS junction can be used for both low-current and high-current applications. When a positive voltage is applied to the diode, it allows current to flow through the junction and generates a negative voltage on the other side. The negative voltage creates a depletion zone which restricts the current flow and keeps the voltage across the device low. This allows the 1N5615GP-E3/73 to be used in applications such as linear power supplies and switch mode power supplies.

The 1N5615GP-E3/73 is commonly used in applications such as lighting and current regulator circuits. It is suitable for standard and custom switching applications, since it has a low forward voltage and a very low reverse leakage current. It can be used for applications such as AC-DC power supplies and DC-DC converter modules. In addition, it is also suitable for wider current regulation applications such as automotive, telecommunications and industrial.

In conclusion, the 1N5615GP-E3/73 is a single rectifier diode which is suitable for applications such as linear power supplies and switch mode power supplies. It has a very low forward voltage of 0.8V and a reverse leakage current of 0.02A, allowing it to be used in a variety of switching applications. It is suitable for lighting and existing applications as well as for a wide range of current regulation applications. It is also known as an ultra low forward voltage diode and is commonly used in AC-DC power supplies and DC-DC converter modules.

The specific data is subject to PDF, and the above content is for reference

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