
Allicdata Part #: | 1N5626GPHE3/54-ND |
Manufacturer Part#: |
1N5626GPHE3/54 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 3A DO201AD |
More Detail: | Diode Standard 600V 3A Through Hole DO-201AD |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 3A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 3µs |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 40pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | 1N5626 |
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The 1N5626GPHE3/54 is a single rectifier diode, often used in power electronics applications where power conversion processes take place. In a single rectifier diode, the forward current is much higher than the reverse current, and this helps increase the efficiency of the power conversion process. The 1N5626GPHE3/54 has a maximum reverse voltage of 54V and a maximum forward current of 100A. It is rated for a maximum repetitive peak reverse voltage of 5.4V.
The primary application field for the 1N5626GPHE3/54 is power conversion. It can be used as a rectifying element in a full-wave bridge rectifier circuit to convert AC power to DC power. It is also used in high-efficiency applications such as solar energy systems and electric vehicles for energy harvesting and power conversion. Additionally, it can be used in resonant converter applications such as flyback transformers, forward converters, and push-pull converters.
The working principle of the 1N5626GPHE3/54 is that of a standard rectifier diode. When an AC voltage is applied to the diode, the positive half cycles pass through the diode, while the reverse voltage is blocked. As the current flows through the diode, it is converted to DC power. The 1N5626GPHE3/54 has a low forward voltage drop which gives it higher efficiency than other common rectifier diodes.
The 1N5626GPHE3/54 has many advantages compared to other rectifier diodes. It has a lower forward voltage drop, which makes it more efficient than other rectifier diodes. It is also very robust and reliable, making it ideal for power conversion applications. Lastly, it has a fast recovery time, which helps reduce power loss in power conversion systems.
In conclusion, the 1N5626GPHE3/54 single rectifier diode is a reliable and efficient power conversion element. It is ideal for power conversion applications such as full-wave bridge rectifiers, resonant converters, and energy harvesting. Its low forward voltage drop, high current rating, and fast recovery time make it more efficient than other rectifier diodes.
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Part Number | Manufacturer | Price | Quantity | Description |
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1N5624GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
1N5627GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
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1N5656 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5637 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5623GP-E3/54 | Vishay Semic... | 0.08 $ | 0 | DIODE GEN PURP 1KV 1A DO2... |
1N5630 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5659 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5611 | Microsemi Co... | 38.79 $ | 1000 | TVS DIODE |
1N5638 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5618GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N5660A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 111V 179V DO13 |
1N5615US | Microsemi Co... | 6.31 $ | 430 | DIODE GEN PURP 200V 1A D5... |
1N5640A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 17.1V 27.7V DO1... |
1N5619 | Microsemi Co... | -- | 177 | DIODE GEN PURP 600V 1A AX... |
1N5623 | Microsemi Co... | 4.82 $ | 1000 | DIODE GEN PURP 1KV 1A AXI... |
1N5659A | Microsemi Co... | -- | 131 | TVS DIODE 102V 165V DO13 |
1N5649A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 40.2V 64.8V DO1... |
1N5662A | Microsemi Co... | 15.37 $ | 74 | TVS DIODE 136V 219V DO13 |
1N5640 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5649 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5650A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 43.6V 70.1V DO1... |
1N5641 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5627GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
1N5638A | Microsemi Co... | -- | 1000 | TVS DIODE 13.6V 22.5V DO1... |
1N5619GP-E3/73 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N5626GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5665 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5648A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 36.8V 59.3V DO1... |
1N5620GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N5650 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5625GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
1N5622GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N5644 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5620 | Microsemi Co... | 4.73 $ | 161 | DIODE GEN PURP 800V 1A AX... |
1N5616C.TR | Semtech Corp... | 2.42 $ | 500 | DIODE GEN PURP 400V 1A AX... |
1N5633A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 8.55V 14.5V DO1... |
1N5617 | Microsemi Co... | -- | 181 | DIODE GEN PURP 400V 1A AX... |
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