
Allicdata Part #: | 1N5640AMS-ND |
Manufacturer Part#: |
1N5640A |
Price: | $ 11.88 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 17.1V 27.7V DO13 |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
100 +: | $ 10.79570 |
Voltage - Clamping (Max) @ Ipp: | 27.7V |
Supplier Device Package: | DO-13 |
Package / Case: | DO-13 |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 1500W (1.5kW) |
Current - Peak Pulse (10/1000µs): | 54A |
Series: | -- |
Voltage - Breakdown (Min): | 19V |
Voltage - Reverse Standoff (Typ): | 17.1V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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Transient Voltage Suppression (TVS) diodes are an important part of any electrical system, from lighting to consumer electronics. In particular, they play a critical role during events of extreme transients such as lightning strikes, load dumps, or inrush currents.The 1N5640A is a particular TVS diode with a wide range of applications.
The 1N5640A is a dual common-cathode (DC) avalanche diode, meaning that it can safely shunt excess current, i.e. direct the current away from sensitive components. In addition to shunt-routing applications, the diode can be used as a protection mechanism against transients, such as electrical surges and spikes. The reverse stand-off voltage of the diode is 33 V, with an avalanche-rated repetitions rate of 20 kW/s. This makes the part ideal for both consumer and automotive applications.
The diode can handle up to 3.2 mA of current, enabling it to absorb surges up to 100V. Furthermore, its low operating temperature makes it energy efficient and well suited to multiple usages. These include protection against inrush current, electrical surges, lightning strikes, overvoltages, and ground fault-interrupts.
Beyond its reliable protection capabilities, the 1N5640A is also known for its low clamping (or voltage drop) voltages, providing greater flexibility and convenience when designing protection circuitry. Finally, its small footprint further simplifies design considerations.
The power handling of the 1N5640A is determined by its working principle. The diode is designed with an avalanche effect, which causes its junction to break down and absorb transient voltage spikes, reducing their effects to a pre-defined safe level. This process begins with the sensing of a voltage spike above the diode\'s break-down voltage. Once the voltage exceeds the break-down voltage, the diode triggers an avalanche effect by quickly inundating the junction with electrons from both directions.
The avalanche process continues until the current reaches a pre-defined level and the voltage reduces to a safe value. As the voltage falls below the stand-off voltage, the device returns to its blocking state. This is the process by which the diode suppresses transients and facilitates their safe passage away from sensitive components.
In conclusion, the 1N5640A diode is a highly versatile and reliable TVS diode with a wide range of applications. Not only does it provide excellent protection against voltage transients, but its low operating temperature, low clamping voltage, and small footprint make it suitable for virtually any electrical system. The diode\'s protection is achieved through a process of avalanche breakdown, allowing for a safe passage of current away from components.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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1N5631A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 7.02V 12.1V DO1... |
1N5664A | Microsemi Co... | 11.88 $ | 35 | TVS DIODE 154V 246V DO13 |
1N5624GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
1N5627GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
1N5646A | Microsemi Co... | 15.37 $ | 100 | TVS DIODE 30.8V 49.9V DO1... |
1N5656 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5637 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5623GP-E3/54 | Vishay Semic... | 0.08 $ | 0 | DIODE GEN PURP 1KV 1A DO2... |
1N5630 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5659 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5611 | Microsemi Co... | 38.79 $ | 1000 | TVS DIODE |
1N5638 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5618GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N5660A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 111V 179V DO13 |
1N5615US | Microsemi Co... | 6.31 $ | 430 | DIODE GEN PURP 200V 1A D5... |
1N5640A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 17.1V 27.7V DO1... |
1N5619 | Microsemi Co... | -- | 177 | DIODE GEN PURP 600V 1A AX... |
1N5623 | Microsemi Co... | 4.82 $ | 1000 | DIODE GEN PURP 1KV 1A AXI... |
1N5659A | Microsemi Co... | -- | 131 | TVS DIODE 102V 165V DO13 |
1N5649A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 40.2V 64.8V DO1... |
1N5662A | Microsemi Co... | 15.37 $ | 74 | TVS DIODE 136V 219V DO13 |
1N5640 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5649 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5650A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 43.6V 70.1V DO1... |
1N5641 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5627GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
1N5638A | Microsemi Co... | -- | 1000 | TVS DIODE 13.6V 22.5V DO1... |
1N5619GP-E3/73 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N5626GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5665 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5648A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 36.8V 59.3V DO1... |
1N5620GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N5650 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5625GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
1N5622GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N5644 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5620 | Microsemi Co... | 4.73 $ | 161 | DIODE GEN PURP 800V 1A AX... |
1N5616C.TR | Semtech Corp... | 2.42 $ | 500 | DIODE GEN PURP 400V 1A AX... |
1N5633A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 8.55V 14.5V DO1... |
1N5617 | Microsemi Co... | -- | 181 | DIODE GEN PURP 400V 1A AX... |
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