
Allicdata Part #: | 1N5649MS-ND |
Manufacturer Part#: |
1N5649 |
Price: | $ 11.88 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 10.79570 |
Series: | * |
Part Status: | Active |
RoHS Status: | RoHS non-compliant |
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Transient voltage suppressors (TVS) are a reliable form of electrical protection against high surges and transients that can damage vulnerable circuits. The 1N5649 diode, which belongs to the family of TVS-diodes, combines the properties of a Zener diode and a high power rectifier. This component is commonly used to ensure the smooth conductive pathways for electrical currents in electrically noisy environments.
When it comes to the application field of the 1N5649 diode, it has a wide array of uses. To begin with, it is frequently used in automotive circuits, such as those that control fan and blower motors, and in electronic ignition systems. It is also frequently used in ac-dc converter circuits, both to limit the inrush current during turn ons, as well as to maintain a stable voltage during operation.
The 1N5649 diode has also become popular in telecom applications, where it is used in systems that require stable operating power conditions. Additionally, it is commonly used in applications which require the protection of microprocessor based devices, such as cell phones and computers. Many people are now using the 1N5649 diode to shield networks from power surges.
The working principle of the 1N5649 diode relies on the basic thermionic emission process. Electrons which have been heated to a high temperature are allowed to start escaping from their source material and flowing towards the electrical circuit. When they reach the diode, they can be reversed and sent back, creating a conducting path which prevents disruptions to the flow of electricity and providing protection from power surges.
Aside from the thermionic emission process, the 1N5649 diode relies on Zenner breakdown to perform its primary function. This occurs when an electric field within the diode is increased to a certain point and causes the electrons to break down into multiple energy levels. This breakdown, when properly tuned, allows for increased power handling ability, making the diode ideal for high-powered electrical applications.
In summary, the 1N5649 diode is a special type of transient voltage suppressor typically used in automotive, telecom, and high power applications where high surge protection and stable operating conditions are needed. It relies on both the thermionic emission process and the Zenner breakdown process to provide protection and increased power handling capabilities.
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Part Number | Manufacturer | Price | Quantity | Description |
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1N5631A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 7.02V 12.1V DO1... |
1N5664A | Microsemi Co... | 11.88 $ | 35 | TVS DIODE 154V 246V DO13 |
1N5624GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
1N5627GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
1N5646A | Microsemi Co... | 15.37 $ | 100 | TVS DIODE 30.8V 49.9V DO1... |
1N5656 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5637 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5623GP-E3/54 | Vishay Semic... | 0.08 $ | 0 | DIODE GEN PURP 1KV 1A DO2... |
1N5630 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5659 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5611 | Microsemi Co... | 38.79 $ | 1000 | TVS DIODE |
1N5638 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5618GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N5660A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 111V 179V DO13 |
1N5615US | Microsemi Co... | 6.31 $ | 430 | DIODE GEN PURP 200V 1A D5... |
1N5640A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 17.1V 27.7V DO1... |
1N5619 | Microsemi Co... | -- | 177 | DIODE GEN PURP 600V 1A AX... |
1N5623 | Microsemi Co... | 4.82 $ | 1000 | DIODE GEN PURP 1KV 1A AXI... |
1N5659A | Microsemi Co... | -- | 131 | TVS DIODE 102V 165V DO13 |
1N5649A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 40.2V 64.8V DO1... |
1N5662A | Microsemi Co... | 15.37 $ | 74 | TVS DIODE 136V 219V DO13 |
1N5640 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5649 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5650A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 43.6V 70.1V DO1... |
1N5641 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5627GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
1N5638A | Microsemi Co... | -- | 1000 | TVS DIODE 13.6V 22.5V DO1... |
1N5619GP-E3/73 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N5626GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5665 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5648A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 36.8V 59.3V DO1... |
1N5620GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N5650 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5625GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
1N5622GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N5644 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5620 | Microsemi Co... | 4.73 $ | 161 | DIODE GEN PURP 800V 1A AX... |
1N5616C.TR | Semtech Corp... | 2.42 $ | 500 | DIODE GEN PURP 400V 1A AX... |
1N5633A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 8.55V 14.5V DO1... |
1N5617 | Microsemi Co... | -- | 181 | DIODE GEN PURP 400V 1A AX... |
TVS DIODE 31V 56.4V DO214AB

TVS DIODE 8.5V 13.5V DO219AB

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TVS DIODE 170V 334V CASE 5A

TVS DIODE 7.02V 12.1V T-18

TVS DIODE 78V 126V DO204AL
