Allicdata Part #: | 1N5627GP-E3/73-ND |
Manufacturer Part#: |
1N5627GP-E3/73 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 800V 3A DO201AD |
More Detail: | Diode Standard 800V 3A Through Hole DO-201AD |
DataSheet: | 1N5627GP-E3/73 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 3A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 3µs |
Current - Reverse Leakage @ Vr: | 200µA @ 800V |
Capacitance @ Vr, F: | 40pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -65°C ~ 175°C |
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The 1N5627GP-E3/73 is a semiconductor device classified under diodes, and more specifically, rectifiers – single. It is a small signal Schottky type diode with a fast response time. It is packaged in a leadless surface-mount TO-251 package and the E3/73 marking indicates the maximum series avalanche energy.
The 1N5627GP-E3/73 has a forward current rating of 255mA at 25 ºC, with a peak repetitive surge current of 800mA. It features a high temperature reverse-current rating of 10nA at 25 ºC and a 5.1V dc reverse-voltage rating. The 1N5627GP-E3/73 diode has a high frequency capacitance of 2.2pF and a maximum peak junction temperature of 175ºC.
The application field of the 1N5627GP-E3/73 ranges from automotive, power and lighting applications, to AC/DC switching and current perception circuits. They\'re also used in light-sensing circuits, detector circuits, rectifier protection circuits, and in circuits with other switching components or memories. Additionally, they can be part of circuits with switched mode power supplies or power converters.
The working principle of the 1N5627GP-E3/73 refers to the junction between two semiconductor materials, an anode and a cathode. This junction behaves as if it were a variable resistor, with the amount of resistance depending on the flow of
The specific data is subject to PDF, and the above content is for reference
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1N5619GP-E3/54 | Vishay Semic... | 0.08 $ | 8000 | DIODE GEN PURP 600V 1A DO... |
1N5623GP-E3/54 | Vishay Semic... | 0.08 $ | 0 | DIODE GEN PURP 1KV 1A DO2... |
1N5626-TR | Vishay Semic... | -- | 5000 | DIODE AVALANCHE 600V 3A S... |
1N5627-TR | Vishay Semic... | 0.27 $ | 1000 | DIODE AVALANCHE 800V 3A S... |
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1N5616US | Microsemi Co... | 5.95 $ | 191 | DIODE GEN PURP 400V 1A D5... |
1N5615GP-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N5617C.TR | Semtech Corp... | 2.42 $ | 1000 | DIODE GEN PURP 400V 2A AX... |
1N5622C.TR | Semtech Corp... | 2.42 $ | 1000 | DIODE GEN PURP 1KV 1A AXI... |
1N5615 | Microsemi Co... | -- | 82 | DIODE GEN PURP 200V 1A AX... |
1N5624-TAP | Vishay Semic... | 0.22 $ | 1000 | DIODE AVALANCHE 200V 3A S... |
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1N5625-TR | Vishay Semic... | 0.26 $ | 1000 | DIODE AVALANCHE 400V 3A S... |
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