1N5627GP-E3/73 Allicdata Electronics
Allicdata Part #:

1N5627GP-E3/73-ND

Manufacturer Part#:

1N5627GP-E3/73

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 800V 3A DO201AD
More Detail: Diode Standard 800V 3A Through Hole DO-201AD
DataSheet: 1N5627GP-E3/73 datasheet1N5627GP-E3/73 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 200µA @ 800V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Description

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The 1N5627GP-E3/73 is a semiconductor device classified under diodes, and more specifically, rectifiers – single. It is a small signal Schottky type diode with a fast response time. It is packaged in a leadless surface-mount TO-251 package and the E3/73 marking indicates the maximum series avalanche energy.

The 1N5627GP-E3/73 has a forward current rating of 255mA at 25 ºC, with a peak repetitive surge current of 800mA. It features a high temperature reverse-current rating of 10nA at 25 ºC and a 5.1V dc reverse-voltage rating. The 1N5627GP-E3/73 diode has a high frequency capacitance of 2.2pF and a maximum peak junction temperature of 175ºC.

The application field of the 1N5627GP-E3/73 ranges from automotive, power and lighting applications, to AC/DC switching and current perception circuits. They\'re also used in light-sensing circuits, detector circuits, rectifier protection circuits, and in circuits with other switching components or memories. Additionally, they can be part of circuits with switched mode power supplies or power converters.

The working principle of the 1N5627GP-E3/73 refers to the junction between two semiconductor materials, an anode and a cathode. This junction behaves as if it were a variable resistor, with the amount of resistance depending on the flow of

The specific data is subject to PDF, and the above content is for reference

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