
1N5650A Circuit Protection |
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Allicdata Part #: | 1N5650AMS-ND |
Manufacturer Part#: |
1N5650A |
Price: | $ 11.88 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 43.6V 70.1V DO13 |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
100 +: | $ 10.79570 |
Voltage - Clamping (Max) @ Ipp: | 70.1V |
Supplier Device Package: | DO-13 |
Package / Case: | DO-13 |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 1500W (1.5kW) |
Current - Peak Pulse (10/1000µs): | 21.4A |
Series: | -- |
Voltage - Breakdown (Min): | 48.5V |
Voltage - Reverse Standoff (Typ): | 43.6V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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TVS diode is a kind of protection that uses the reverse breakdown voltage of the diode to achieve overvoltage protection. The 1N5650A is a 40V unidirectional transient voltage suppression diode (TVS), offering low leakage current and low-capacitance protection with highest peak pulse current in its packing size.
1N5650A application field
1N5650A is suitable for applications which required high peak pulse power dissipation such as USB data lines, I2C bus networks, board level protection, and power supply. It is also used to protect charging port, charging cable, headset, audio line, and other sensitive digital circuits against over voltages.
1N5650A working principle
The 1N5650A diodes provide bidirectional protection against high-energy transients. When the capacitor supplies a peak current exceeding the rated peak pulse power, the diode begins to turn on. When the peak current is lower than the rated peak pulse power, the diode will turn off, limiting the maximum voltage that can reach the circuit. A overvoltage situation will cause the 1N5650A to start the breakdown mode and limit the voltage to maintain the protective level. This process provides effective protection against high-energy transients.
In normal working condition, the 1N5650A diode is reverse bias of the breakdown voltage. The 1N5650A diode can withstand up to 40V, so it provides a greater level of operation. It also provides excellent performance protection via its low leakage current and clamping limit. The clamping limit offered by the 1N5650A ensures that there is no risk of damage to the device that the diode is supposed to protect.
The clamping voltage of 1N5650A is also decently low and is usually within the 5V to 6V range. This low clamping voltage ensures that there is no surge on the board, which guarantees the safe operation of the device.
In conclusion, the 1N5650A is a 40V unidirectional transient voltage suppression device that efficiently provides over-voltage/over-current protection and low leakage current to ensure safety. It is mainly used in application where high peak pulse power is required, such as in USB data lines, I2C bus networks and board level protection.
The specific data is subject to PDF, and the above content is for reference
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1N5630 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5659 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
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1N5638 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
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1N5640A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 17.1V 27.7V DO1... |
1N5619 | Microsemi Co... | -- | 177 | DIODE GEN PURP 600V 1A AX... |
1N5623 | Microsemi Co... | 4.82 $ | 1000 | DIODE GEN PURP 1KV 1A AXI... |
1N5659A | Microsemi Co... | -- | 131 | TVS DIODE 102V 165V DO13 |
1N5649A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 40.2V 64.8V DO1... |
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1N5640 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5649 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5650A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 43.6V 70.1V DO1... |
1N5641 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5627GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 3A DO... |
1N5638A | Microsemi Co... | -- | 1000 | TVS DIODE 13.6V 22.5V DO1... |
1N5619GP-E3/73 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N5626GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
1N5665 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5648A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 36.8V 59.3V DO1... |
1N5620GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N5650 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
1N5625GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
1N5622GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N5644 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
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1N5616C.TR | Semtech Corp... | 2.42 $ | 500 | DIODE GEN PURP 400V 1A AX... |
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