1N5662A Circuit Protection |
|
Allicdata Part #: | 1N5662AMS-ND |
Manufacturer Part#: |
1N5662A |
Price: | $ 15.37 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 136V 219V DO13 |
More Detail: | N/A |
DataSheet: | 1N5662A Datasheet/PDF |
Quantity: | 74 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | $ 13.97340 |
10 +: | $ 12.70080 |
25 +: | $ 11.74820 |
100 +: | $ 10.79570 |
250 +: | $ 9.84312 |
Voltage - Clamping (Max) @ Ipp: | 219V |
Supplier Device Package: | DO-13 |
Package / Case: | DO-13 |
Mounting Type: | Through Hole |
Operating Temperature: | -65°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 1500W (1.5kW) |
Current - Peak Pulse (10/1000µs): | 6.8A |
Series: | -- |
Voltage - Breakdown (Min): | 152V |
Voltage - Reverse Standoff (Typ): | 136V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
TVS diodes are special electronic components that are used to protect vulnerable circuits from damage due to overvoltage events. The 1N5662A application field and working principle are important to ensure that they are properly implemented and can perform their intended functions. This article will discuss the 1N5662A\'s application field and working principle.
To understand the 1N5662A\'s application field, we must first explain the major application of TVS devices: protecting circuits and components from excessive voltage. TVS diodes are designed to clamp the voltage below a certain level, so if the voltage entering a circuit exceeds this level, the TVS diode diverts the extra voltage away, preventing damage to the circuit. A TVS diode achieves this by acting like a "tripwire" or valve, so when the excess voltage reaches a certain level, the diode "trips" or "shuts" off to limit the current to a safe level. This feature makes it ideal for protecting the vulnerable electronics that are subject to extreme electrical conditions.
The 1N5662A is particularly well-suited for the protection of ICs and other components found in equipment such as LCD displays and mobile phones, as it can handle high levels of current, up to 20A, and a wide range of voltages up to 135V. This makes it versatile and applicable in a variety of devices that require protection from overvoltage events.
Now that we understand the 1N5662A\'s application field, let\'s look at its working principle. As mentioned earlier, the 1N5662A can handle high levels of voltage, up to 135V, and high levels of current, up to 20A. When the voltage across the diode exceeds the maximum permitted level of 135V, the diode becomes forward-biased, diverting the excess current away from the protected circuit.
When the voltage falls below the threshold level of 135V, the diode becomes reverse-biased and no current flows through it. The 1N5662A is designed with a maximum leakage current to ensure that it does not cause excessive power loss when the circuit is in a low voltage scenario. This allows the device to protect the circuit without causing substantial power loss to the device.
The 1N5662A is an important device to ensure that circuits are protected, and its application field and working principle are key to understanding how it can be utilized to protect electronic devices and circuits from damage due to overvoltage events. This knowledge can help in the selection and application of this diode in an environment that requires protection from high voltage events.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N5611 | Microsemi Co... | 38.79 $ | 1000 | TVS DIODE |
1N5648 | Littelfuse I... | 0.0 $ | 1000 | TVS DIODE 34.8V 61.9V DO1... |
1N5655A | Microsemi Co... | 15.37 $ | 2 | TVS DIODE 70.1V 113V DO13 |
1N5636A | Microsemi Co... | 15.61 $ | 48 | TVS DIODE 11.1V 18.2V DO1... |
1N5613 | Microsemi Co... | 45.0 $ | 1000 | TVS DIODE C-BODY |
1N5610 | Microsemi Co... | 45.37 $ | 1 | TVS DIODE 30.5V 47.6V G A... |
1N5625-TAP | Vishay Semic... | 0.26 $ | 10000 | DIODE AVALANCHE 400V 3A S... |
1N5627-TAP | Vishay Semic... | 0.27 $ | 10000 | DIODE AVALANCHE 800V 3A S... |
1N5620C.TR | Semtech Corp... | 2.42 $ | 500 | DIODE GEN PURP 800V 1A AX... |
1N5616C.TR | Semtech Corp... | 2.42 $ | 500 | DIODE GEN PURP 400V 1A AX... |
1N5614 | Microsemi Co... | 4.59 $ | 349 | DIODE GEN PURP 200V 1A AX... |
1N5618 | Microsemi Co... | 4.59 $ | 299 | DIODE GEN PURP 600V 1A AX... |
1N5617 | Microsemi Co... | -- | 181 | DIODE GEN PURP 400V 1A AX... |
1N5618US | Microsemi Co... | 5.95 $ | 481 | DIODE GEN PURP 600V 1A D5... |
1N5615US | Microsemi Co... | 6.31 $ | 430 | DIODE GEN PURP 200V 1A D5... |
1N5617US | Microsemi Co... | 6.95 $ | 458 | DIODE GEN PURP 400V 1A D5... |
1N5619US | Microsemi Co... | 7.77 $ | 163 | DIODE GEN PURP 600V 1A D5... |
1N5624-TR | Vishay Semic... | 0.25 $ | 7500 | DIODE AVALANCHE 200V 3A S... |
1N5620 | Microsemi Co... | 4.73 $ | 161 | DIODE GEN PURP 800V 1A AX... |
1N5616 | Microsemi Co... | 4.59 $ | 270 | DIODE GEN PURP 400V 1A AX... |
1N5617GP-E3/54 | Vishay Semic... | 0.08 $ | 4000 | DIODE GEN PURP 400V 1A DO... |
1N5619GP-E3/54 | Vishay Semic... | 0.08 $ | 8000 | DIODE GEN PURP 600V 1A DO... |
1N5623GP-E3/54 | Vishay Semic... | 0.08 $ | 0 | DIODE GEN PURP 1KV 1A DO2... |
1N5626-TR | Vishay Semic... | -- | 5000 | DIODE AVALANCHE 600V 3A S... |
1N5627-TR | Vishay Semic... | 0.27 $ | 1000 | DIODE AVALANCHE 800V 3A S... |
1N5619 | Microsemi Co... | -- | 177 | DIODE GEN PURP 600V 1A AX... |
1N5616US | Microsemi Co... | 5.95 $ | 191 | DIODE GEN PURP 400V 1A D5... |
1N5615GP-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N5617C.TR | Semtech Corp... | 2.42 $ | 1000 | DIODE GEN PURP 400V 2A AX... |
1N5622C.TR | Semtech Corp... | 2.42 $ | 1000 | DIODE GEN PURP 1KV 1A AXI... |
1N5615 | Microsemi Co... | -- | 82 | DIODE GEN PURP 200V 1A AX... |
1N5624-TAP | Vishay Semic... | 0.22 $ | 1000 | DIODE AVALANCHE 200V 3A S... |
1N5626-TAP | Vishay Semic... | 0.26 $ | 1000 | DIODE AVALANCHE 600V 3A S... |
1N5625-TR | Vishay Semic... | 0.26 $ | 1000 | DIODE AVALANCHE 400V 3A S... |
1N5614US | Microsemi Co... | 6.01 $ | 122 | DIODE GEN PURP 200V 1A D5... |
1N5656A | Microsemi Co... | -- | 26 | TVS DIODE 77.8V 125V DO13 |
1N5647A | Microsemi Co... | 15.37 $ | 450 | TVS DIODE 33.3V 53.9V DO1... |
1N5617E3 | Microsemi Co... | 3.49 $ | 1000 | RECTIFIERDiode Standard 4... |
1N5622 | Semtech Corp... | -- | 1000 | DIODE GEN PURP 1KV 2A AXI... |
1N5622US | Microsemi Co... | 4.45 $ | 1000 | DIODE GEN PURP 1KV 1A D5A... |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL