
Allicdata Part #: | 1N646-ND |
Manufacturer Part#: |
1N646 |
Price: | $ 1.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | SILICON SWITCHING DIODES |
More Detail: | Diode |
DataSheet: | ![]() |
Quantity: | 1000 |
596 +: | $ 0.97241 |
Series: | * |
Part Status: | Active |
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An 1N646 is a signal diode, a special type of diode that has been specially designed to be used in high-frequency, low-power applications such as signal processing circuits. The 1N646 has a wide range of uses in high-speed data and analog signals. It has a low capacitance and low leakage current, making it suitable for use in both high-impedance and low-impedance applications.
A diode is a device that allows current to flow in one direction only. It is an active two terminal semiconductor device that acts as an electrical insulator. It acts as a rectifier by allowing only direct current (DC) and blocking alternating current (AC). A signal diode is one specifically designed for high-frequency, low-power applications. The 1N646 is a signal diode commonly used in these types of applications.
The working principle of the 1N646 diode is based on PN junction. A PN junction is formed when two layers of semiconductor material with different types of resistivity are connected in parallel. The two layers are typically made of a P-type semiconductor and an N-type semiconductor material. When a voltage is applied to the junction, it will allow electrons to flow in a single direction/from the P layer to the N layer/ making it an effective rectifier.
The 1N646 is most often used in applications where low capacitance, fast response, and low voltage are important. It is used for signal and noise isolation, for filtering, for biasing, and to convert high volt AC to low volt DC. It can also be used in logic circuits, DC power supplies, and in the protection of sensitive electronic components.
The 1N646 diode is also an effective low-cost solution for a variety of voltage clamping applications. It can be used as a reverse voltage protection device, as an overvoltage protection diode, and as a protector of delicate and sensitive components. The low capacitance of the 1N646 also makes it ideal for switching and other high-frequency applications.
The 1N646 has a very valuable role in a range of high-speed data and analog signal applications. It features a low capacitance and low leakage current, making it ideal for low-impedance circuits. It is a low-cost solution for voltage clamping, protection from overvoltage, and protection of sensitive electronics. The 1N646 is widely used in many applications including logic circuits, DC power supplies, and signal and noise isolation.
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Part Number | Manufacturer | Price | Quantity | Description |
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1N6478HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N6479HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
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1N6483HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N6482-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N6468US | Semtech Corp... | 8.09 $ | 1000 | TVS DIODE 51.6V 78.5V |
1N6489 | Microsemi Co... | 8.67 $ | 1000 | ZENER DIODEZener Diode |
1N6473 | Semtech Corp... | 7.29 $ | 1000 | TVS DIODE 24V 41.4V AXIAL |
1N6489US | Microsemi Co... | 9.18 $ | 1000 | ZENER DIODEZener Diode |
1N6474US | Semtech Corp... | 8.29 $ | 1000 | TVS DIODE 30.5V 47.5V GME... |
1N6484HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N6468 | Microsemi Co... | 12.82 $ | 16 | TVS DIODE 51.6V 78.5V AXI... |
1N6480-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N6479-E3/96 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
1N646UR-1 | Microsemi Co... | 3.81 $ | 1000 | SILICON SWITCHING DIODESD... |
1N6470US | Semtech Corp... | 8.29 $ | 1000 | TVS DIODE 6V 11V GMELF |
1N6485US | Microsemi Co... | 9.18 $ | 1000 | ZENER DIODEZener Diode |
1N645UR-1 | Microsemi Co... | 1.69 $ | 1000 | DIODE GEN PURP 225V 400MA... |
1N646-1 | Microsemi Co... | 1.08 $ | 1000 | DIODE GEN PURP 300V 400MA... |
1N6492 | Microsemi Co... | -- | 1000 | ZENER DIODEZener Diode |
1N6485 | Microsemi Co... | 8.67 $ | 1000 | ZENER DIODEZener Diode |
1N6481-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N645-1E3 | Microsemi Co... | 1.03 $ | 1000 | SWITCHING DIODEDiode Stan... |
1N6479HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N6486 | Microsemi Co... | 8.67 $ | 1000 | ZENER DIODEZener Diode |
1N6463US | Semtech Corp... | 8.09 $ | 1000 | TVS DIODE 12V 22.6V |
1N6465US | Semtech Corp... | 8.09 $ | 1000 | TVS DIODE 24V 41.4V |
1N647-1 | Microsemi Co... | 2.05 $ | 4401 | DIODE GEN PURP 400V 400MA... |
1N6466 | Semtech Corp... | 6.19 $ | 1000 | TVS DIODE 30.5V 47.5V AXI... |
1N6481HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N647UR-1 | Microsemi Co... | 3.16 $ | 1000 | DIODE GEN PURP 400V 400MA... |
1N6482HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N646 | Microsemi Co... | 1.08 $ | 1000 | SILICON SWITCHING DIODESD... |
1N645-1 | Microsemi Co... | 1.58 $ | 1628 | DIODE GEN PURP 225V 400MA... |
1N6484HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N6481-E3/96 | Vishay Semic... | 0.08 $ | 4500 | DIODE GEN PURP 400V 1A DO... |
1N6478-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N6478HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N6487 | Microsemi Co... | 8.67 $ | 1000 | ZENER DIODEZener Diode |
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