1N6485US

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The 1N6485US is a diode that falls into the category of Zener, meaning it has a single element. It is specifically classified as a Zener diode since it has a reversed breakdown voltage, or Zener voltage, that is generated when the device is exposed to an external electric field. In the forward direction, or anode-to-cathode current, the device behaves as a conventional semiconductor diode, meaning it allows current to flow in one direction only. However, in the reverse direction, or cathode-to-anode current, the device exhibits a Zenor voltage, which is generated due to a voltage-dependent depletion region within the diode when exposed to an external electric field.

The 1N6485US diode is available in a range of physical sizes and power ratings, from 0.5W to 5W, and from SOD-123 to SOT-23, depending on the application. Its standard power rating, 1.5W, is suitable for applications such as voltage regulating, over-voltage protection, or over-voltage clamping. These applications are made possible, due to the stable Zener voltage available within the reverse direction of the diode, making it ideal for use in circuits where a specific voltage is required for operation.

The 1N6485US diode is typically used in circuits that require a fixed voltage output from a power supply, regardless of load, environmental, or input changes. It is also a great choice for voltage regulation in DC-DC converters as it can help to maintain the desired voltage output from the converter despite load current range and input voltage changes. Moreover, the 1N6485US can be used in circuits needing over-voltage protection, circuit isolation, and reset protection for microcontrollers, as well as for RF applications, such as RF transmitters and receivers.

In terms of working principle, the 1N6485US diode maintains a constant and stable Zener voltage across its terminals when a reverse voltage is applied. This is due to a unique mechanism, that is, the formation of a voltage-dependent depletion region within the diode when exposed to an external electric field. This depletion region is created by the diversion of majority carriers, such as electrons and holes, resulting in a depletion of carriers across the PN junction. As a result of this unique mechanism, a constant voltage is maintained across the junction of the diode, regardless of the applied forward or reverse voltage.

The 1N6485US also has a reverse current leakage, referred to as its reverse leakage current, that is generated when the device is exposed to a reverse voltage. This reverse leakage current is due to the diffusion of majority carriers across the depletion area, wherein a number of the majority carriers are able to cross over the junction. This results in a small current leakage across the diode, which is generally insignificant for general applications, such as voltage regulating and protection.

In conclusion, the 1N6485US is a single element Zener diode that has applications in voltage regulation, over-voltage protection, circuit isolation, reset protection, and RF applications. It is able to maintain a constant Zener voltage across its terminals when exposed to a reverse voltage due to a unique voltage-dependent depletion region within the diode. Furthermore, the 1N6485US has a low reverse current leakage, which makes it a suitable choice for use in general applications.

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