1N6462US

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TVS (transient voltage suppressor) diodes are a type of diode designed to limit transient voltage pulses popping up on data and power lines. The 1N6462US is an unidirectional silent junction TVS diode suitable for suppress the voltage of communication lines, data lines, and power lines.

Application Field

The 1N6462US TVS Diode is designed to protect high speed data and power bus from static discharge. It is suitable for T1/E1, T3/E3, ISDN US and ISDN S/T lines. Even in high temperature and high humidity environments, it still works reliably and without any additional external components.

This diode can also be used in automotive, automated test equipment, communication systems and many other applications, especially in systems with isolated or floating grounds.

Working Principle

When transient voltage spikes occur, the 1N6462US TVS diode limits the voltage across the circuit. The working principle of this diode is turn-on by a positive gate current applied to the anode and capped at a maximum breakdown voltage. The 1N6462US has tri-state breakdown characteristic, which means that they turn off at negative polarity pulses. During reverse breakdown, the anode current increases until the reverse breakdown voltage is reached.

When the breakdown voltage is exceeded, the voltage at the cathode ? of the diode rises rapidly. When the diode turns off, the current passes through the load, and the surge current flows across the diode. This causes the device to saturate and the voltage across the device is reduced to a level much lower than the original transient voltage. When the surge current stops, the diode turns off again and the device returns to its original condition.

Conclusion

The 1N6462US TVS diode is one type of TVS (transient voltage suppressor) diodes, which are designed to protect high speed data and power bus from static discharge. The 1N6462US works reliably and without additional external components. The working principle of this diode is turn-on by a positive gate current applied to the anode and capped at a maximum breakdown voltage. The 1N6462US has a tri-state breakdown characteristic which gives it great protection against transient voltage spikes.

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