| Allicdata Part #: | 1N6479-E3/96-ND |
| Manufacturer Part#: |
1N6479-E3/96 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 100V 1A DO213AB |
| More Detail: | Diode Standard 100V 1A Surface Mount DO-213AB |
| DataSheet: | 1N6479-E3/96 Datasheet/PDF |
| Quantity: | 1000 |
| Series: | SUPERECTIFIER® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 100V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 10µA @ 100V |
| Capacitance @ Vr, F: | 8pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-213AB, MELF (Glass) |
| Supplier Device Package: | DO-213AB |
| Operating Temperature - Junction: | -65°C ~ 175°C |
| Base Part Number: | 1N6479 |
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Diodes are one of the most important components in electrical engineering. They are used in a wide variety of applications, from signal processing to power conversion and many more. The 1N6479-E3/96 is a single rectifier diode and is among the most commonly used diodes in the industry. It is also one of the oldest and most reliable diode types around.
The 1N6479-E3/96 is a minority-carrier device. It is a single-phase rectifier and its blocking voltage is 400 V. It is available in two threshold voltages: 6V and 12 V. It is made from silicon, which is both highly conductive and has a low leakage coefficient. As with any diode, the 1N6479-E3/96 has a very low forward voltage drop of around 0.4 V.
Due to its long history and reliable characteristics, the 1N6479-E3/96 is used in a variety of applications. It is most commonly used in AC-DC power supplies, electronic circuit protection, clamping diodes, motor control and wave shaping circuits, crossovers, and power MOSFET and bipolar transistor circuits. It can also be used in automotive and industrial applications, as well as in low-noise circuits.
The 1N6479-E3/96 has a simple but effective principle of operation. In simple terms, it is a diode designed to allow current to flow in one direction only. Its basic function is to allow current to flow in a specific direction, which allows it to be used in all kinds of different circuits. When a forward voltage is applied to it, current will flow from the anode to the cathode and the device will act as an open circuit. When the reverse voltage is applied, current will not flow, and the diode will act as a closed circuit.
The 1N6479-E3/96 is a reliable diode with an extensive list of applications. It is still highly sought-after and is used in many circuits due to its long history and proven track record. With its low forward voltage drop and excellent leakage coefficient, it is one of the most popular diodes in the industry. With its robust design and simple operation, it is a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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|---|
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| 1N6474US | Semtech Corp... | 8.29 $ | 1000 | TVS DIODE 30.5V 47.5V GME... |
| 1N6484HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| 1N6468 | Microsemi Co... | 12.82 $ | 16 | TVS DIODE 51.6V 78.5V AXI... |
| 1N6480-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N6479-E3/96 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
| 1N646UR-1 | Microsemi Co... | 3.81 $ | 1000 | SILICON SWITCHING DIODESD... |
| 1N6470US | Semtech Corp... | 8.29 $ | 1000 | TVS DIODE 6V 11V GMELF |
| 1N6485US | Microsemi Co... | 9.18 $ | 1000 | ZENER DIODEZener Diode |
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| 1N646-1 | Microsemi Co... | 1.08 $ | 1000 | DIODE GEN PURP 300V 400MA... |
| 1N6492 | Microsemi Co... | -- | 1000 | ZENER DIODEZener Diode |
| 1N6485 | Microsemi Co... | 8.67 $ | 1000 | ZENER DIODEZener Diode |
| 1N6481-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| 1N645-1E3 | Microsemi Co... | 1.03 $ | 1000 | SWITCHING DIODEDiode Stan... |
| 1N6479HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| 1N6486 | Microsemi Co... | 8.67 $ | 1000 | ZENER DIODEZener Diode |
| 1N6463US | Semtech Corp... | 8.09 $ | 1000 | TVS DIODE 12V 22.6V |
| 1N6465US | Semtech Corp... | 8.09 $ | 1000 | TVS DIODE 24V 41.4V |
| 1N647-1 | Microsemi Co... | 2.05 $ | 4401 | DIODE GEN PURP 400V 400MA... |
| 1N6466 | Semtech Corp... | 6.19 $ | 1000 | TVS DIODE 30.5V 47.5V AXI... |
| 1N6481HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| 1N647UR-1 | Microsemi Co... | 3.16 $ | 1000 | DIODE GEN PURP 400V 400MA... |
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| 1N645-1 | Microsemi Co... | 1.58 $ | 1628 | DIODE GEN PURP 225V 400MA... |
| 1N6484HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| 1N6481-E3/96 | Vishay Semic... | 0.08 $ | 4500 | DIODE GEN PURP 400V 1A DO... |
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1N6479-E3/96 Datasheet/PDF