1N6481HE3/97 Allicdata Electronics
Allicdata Part #:

1N6481HE3/97-ND

Manufacturer Part#:

1N6481HE3/97

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 400V 1A DO213AB
More Detail: Diode Standard 400V 1A Surface Mount DO-213AB
DataSheet: 1N6481HE3/97 datasheet1N6481HE3/97 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.07578
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: SUPERECTIFIER®
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 1N6481
Description

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Diodes, and particularly rectifiers, have been used for years in a wide range of applications, from power supplies to computers and many other devices. The 1N6481HE3/97 is a single rectifier diode with a high-efficiency, high-energy silicon semiconductor chip, commonly used in power supplies, communications systems and various electronic equipment. In this article, we will discuss the application field and working principle of the 1N6481HE3/97.

The 1N6481HE3/97 is used in many different applications. In communications systems, the 1N6481HE3/97 is used in telephone and cell phone networks, where the diode is used to convert alternation current to direct current and vice versa. It is also used to create DC power from AC power. In power supplies, the 1N6481HE3/97 is used to regulate the amount of current entering the power supply, preventing too much current from flowing at any given time. And in electronics systems, the 1N6481HE3/97 is used in various signal-processing circuits, such as rectifiers and regulators, to upgrade signal-processing performance.

As for the working principle of the 1N6481HE3/97 diode, it is best understood when looking at the diode\'s graphical symbol, which is shown in the following figure. The triangle symbolizes the anode, and the vertical line represents the cathode. When a voltage is applied to the opposite end of the anode, the diode allows current to flow in one direction and blocks it in the other direction with its reverse resistance. This helps to regulate the current, or direct it where it needs to go.

The 1N6481HE3/97 diode also has a few other specific features that make it a suitable choice for many applications. For one, the 1N6481HE3/97 operates in a relatively low-voltage range of 6–72 V, which makes it ideal for use in low-power circuits. Additionally, the 1N6481HE3/97 has a peak reverse current conduction of 1.2 A and a forward voltage drop of 0.75 V at 10 A, which makes it suitable for a wide range of power circuits. Furthermore, the silicon semiconductor chip used in the 1N6481HE3/97 reduces the leakage current to a minimum, making it very efficient in operation.

All in all, the 1N6481HE3/97 is an ideal choice for many applications, particularly those related to communications, power and electronics systems. It is easy to use, reliable and efficient, and is sure to provide excellent performance. The application field and working principle of the 1N6481HE3/97 are explained in this article, and we hope that it has been a useful reference.

The specific data is subject to PDF, and the above content is for reference

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