
Allicdata Part #: | 1N6482-E3/97-ND |
Manufacturer Part#: |
1N6482-E3/97 |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 1A DO213AB |
More Detail: | Diode Standard 600V 1A Surface Mount DO-213AB |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.06034 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | 8pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AB, MELF (Glass) |
Supplier Device Package: | DO-213AB |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | 1N6482 |
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Diodes are a type of semiconductor device that can direct current in one direction while blocking current in the opposite direction. The 1N6482-E3/97 is a single rectifier diode commonly used in power supplies and AC-DC converters. This article will provide an in-depth explanation of the 1N6482-E3/97 device, including its application field and working principle.
The 1N6482-E3/97 diode comprises an anode, cathode, and a junction between them. The anode is the positive terminal while the cathode is the negative terminal. The junction is made of N-type and P-type semiconductors, forming a diode bridge rectifier circuit with a reverse recovery time of approximately 30 nanoseconds. This makes the device suitable for applications that require fast switching and sharp response times.
The rated power of the 1N6482-E3/97 is 1.5 Amps at a voltage of 1000V. The device also features a high surge current rating of 80 Amps, allowing it to handle high current requests. In addition, it has a low forward voltage of 0.7V, making it ideal for applications where power saving is a priority.
The 1N6482-E3/97 is primarily used in power supplies and AC-DC converters. Its single rectifier design and reverse recovery time of 30 nanoseconds make it suitable for high-speed switching and high power AC-DC conversion. Its low forward voltage of 0.7V and high surge current rating of 80 Amps make it ideal for applications that require power saving and need to handle sudden high-power demands.
The 1N6482-E3/97 has a working principle based on the unidirectional flow of current. When the anode is connected to a positive voltage supply, electrons move through the junction and into the cathode, allowing current to flow in one direction. However, when the voltage is reversed, the junction blocks the motion of electrons, preventing any current from flowing.
In conclusion, the 1N6482-E3/97 is a single rectifier diode used primarily in power supplies and AC-DC converters. It features a reverse recovery time of 30 nanoseconds and a low forward voltage of 0.7V, enabling it to handle both high-speed switching and power saving applications. Its working principle is based on the unidirectional flow of electrons through the junction between its anode and cathode.
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1N6483HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N6482-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
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1N6474US | Semtech Corp... | 8.29 $ | 1000 | TVS DIODE 30.5V 47.5V GME... |
1N6484HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N6468 | Microsemi Co... | 12.82 $ | 16 | TVS DIODE 51.6V 78.5V AXI... |
1N6480-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N6479-E3/96 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
1N646UR-1 | Microsemi Co... | 3.81 $ | 1000 | SILICON SWITCHING DIODESD... |
1N6470US | Semtech Corp... | 8.29 $ | 1000 | TVS DIODE 6V 11V GMELF |
1N6485US | Microsemi Co... | 9.18 $ | 1000 | ZENER DIODEZener Diode |
1N645UR-1 | Microsemi Co... | 1.69 $ | 1000 | DIODE GEN PURP 225V 400MA... |
1N646-1 | Microsemi Co... | 1.08 $ | 1000 | DIODE GEN PURP 300V 400MA... |
1N6492 | Microsemi Co... | -- | 1000 | ZENER DIODEZener Diode |
1N6485 | Microsemi Co... | 8.67 $ | 1000 | ZENER DIODEZener Diode |
1N6481-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N645-1E3 | Microsemi Co... | 1.03 $ | 1000 | SWITCHING DIODEDiode Stan... |
1N6479HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N6486 | Microsemi Co... | 8.67 $ | 1000 | ZENER DIODEZener Diode |
1N6463US | Semtech Corp... | 8.09 $ | 1000 | TVS DIODE 12V 22.6V |
1N6465US | Semtech Corp... | 8.09 $ | 1000 | TVS DIODE 24V 41.4V |
1N647-1 | Microsemi Co... | 2.05 $ | 4401 | DIODE GEN PURP 400V 400MA... |
1N6466 | Semtech Corp... | 6.19 $ | 1000 | TVS DIODE 30.5V 47.5V AXI... |
1N6481HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N647UR-1 | Microsemi Co... | 3.16 $ | 1000 | DIODE GEN PURP 400V 400MA... |
1N6482HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N646 | Microsemi Co... | 1.08 $ | 1000 | SILICON SWITCHING DIODESD... |
1N645-1 | Microsemi Co... | 1.58 $ | 1628 | DIODE GEN PURP 225V 400MA... |
1N6484HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N6481-E3/96 | Vishay Semic... | 0.08 $ | 4500 | DIODE GEN PURP 400V 1A DO... |
1N6478-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
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1N6487 | Microsemi Co... | 8.67 $ | 1000 | ZENER DIODEZener Diode |
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