| Allicdata Part #: | 1N6467S-ND |
| Manufacturer Part#: |
1N6467 |
| Price: | $ 6.19 |
| Product Category: | Circuit Protection |
| Manufacturer: | Semtech Corporation |
| Short Description: | TVS DIODE 40.3V 63.5V AXIAL |
| More Detail: | N/A |
| DataSheet: | 1N6467 Datasheet/PDF |
| Quantity: | 1000 |
| 125 +: | $ 5.62278 |
| Current - Peak Pulse (10/1000µs): | 8A |
| Supplier Device Package: | Axial |
| Package / Case: | Axial |
| Mounting Type: | Through Hole |
| Operating Temperature: | -65°C ~ 175°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 500W |
| Series: | -- |
| Voltage - Clamping (Max) @ Ipp: | 63.5V |
| Voltage - Breakdown (Min): | 43.7V |
| Voltage - Reverse Standoff (Typ): | 40.3V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Part Status: | Active |
| Packaging: | Bulk |
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TVS - Diodes
The 1N6467 is a unidirectional Transient Voltage Suppressor (TVS) diode. It is a device designed to protect sensitive electronics from high-voltage transients such as electrostatic discharge (ESD), lightning strikes, and other high voltage surges. It is typically used in automotive, industrial, and consumer electronic devices.
Structure and Working Principle
The 1N6467 consists of two reverse-biased, p-n junction diode stacks. The structure of the device is designed to provide a low clamping voltage (which is the voltage at which the device starts to conduct current) and an excellent electrical breakdown performance. In other words, it is designed to suppress transient surges above a certain threshold level without damaging the circuit.
When a voltage transient is applied to the 1N6467, it behaves like a resistance instead of a diode. This is due to the internal structure of the device. The voltage across the junction increases according to its forward voltage drop until it reaches its breakdown voltage. This is also known as the “snap-back” region. If the applied transient voltage exceeds the breakdown voltage, the 1N6467 will start to conduct current and provide the necessary protection to the device or circuit.
The 1N6467 is also designed with dual-directional protection against ESD and lightning. This means that it can provide protection in both directions in the case of a transient surge. This is important in ensuring that the device or circuit does not fail due to a transient surge in either direction.
Applications
The 1N6467 can be used to provide protection for many different types of devices and circuits. It can be used in automotive applications to protect electronic components that may be subjected to high-voltage transients. It is also often used in consumer electronics such as cell phones, tablets, and laptop computers. In addition, it is commonly used in industrial applications such as solar cells, medical equipment, and industrial equipment.
The 1N6467 can also be used in data transmission systems to protect against ESD damage. In these types of systems, the 1N6467 can be connected across data lines to provide protection against ESD events. This can help to ensure reliable data transmission even in the presence of high voltage transients.
Conclusion
The 1N6467 is an important component for protecting sensitive electronic circuits from transient surges. It is designed to provide low clamping voltage, excellent electrical breakdown performance, and dual-directional protection. It is commonly used in automotive, consumer, and industrial applications to protect against ESD and lightning. It is an essential component for ensuring the reliable operation of many different types of electronic circuits.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| 1N6482-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| 1N6475US | Semtech Corp... | 8.29 $ | 1000 | TVS DIODE 40.3V 63.5V GME... |
| 1N6479HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| 1N6475 | Semtech Corp... | 7.29 $ | 1000 | TVS DIODE 40.3V 63.5V AXI... |
| 1N6479-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
| 1N6478HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| 1N6476US | Semtech Corp... | 8.29 $ | 1000 | TVS DIODE 51.6V 78.5V GME... |
| 1N6483HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
| 1N6461 | Semtech Corp... | 6.19 $ | 1000 | TVS DIODE 5V 9V AXIAL |
| 1N6478-E3/96 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
| 1N6479-E3/96 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
| 1N646UR-1 | Microsemi Co... | 3.81 $ | 1000 | SILICON SWITCHING DIODESD... |
| 1N6483-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
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| 1N645-1E3 | Microsemi Co... | 1.03 $ | 1000 | SWITCHING DIODEDiode Stan... |
| 1N6462US | Semtech Corp... | 8.09 $ | 1000 | TVS DIODE 6V 11V |
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| 1N6481HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
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1N6467 Datasheet/PDF