| Allicdata Part #: | 1N6488US-ND |
| Manufacturer Part#: |
1N6488US |
| Price: | $ 9.18 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | ZENER DIODE |
| More Detail: | Zener Diode |
| DataSheet: | 1N6488US Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 8.26546 |
| Series: | * |
| Part Status: | Active |
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Introduction: The 1N6488US is a single Zener diode, specially designed for semiconductor technology and electronic devices. The diode is used in a variety of electronic circuits, such as in power supplies, voltage regulators, amplifiers and regulators, voltage-controlled amplifiers, and semiconductor switching circuits.
Application Field
The 1N6488US is used in a variety of applications, including voltage regulation, current limiting, and heating control. This diode can be used in a variety of AC and DC power applications, such as in RF amplifiers, and low-noise switching applications. Due to its small size and capacitance, it is also ideal for telecommunication and data processing applications.
The 1N6488US is used in digital and analog electronic devices, such as computers, televisions, and radios. It is often used in devices which require low-voltage regulation, such as on-board computers and power supplies in portable electronics devices.
The diode can be used in battery-charging applications, where low-voltage regulation is required. Its low-capacity makes it ideal for devices which require low-amperage regulation, such as mobile devices.
The 1N6488US is also used in automotive applications, such as in vehicle speed control systems and power steering systems. Its low-voltage and low-current characteristics make it ideal for use in these applications.
The diode is also used in semiconductor circuits, such as oscillators and transistor switches. Its low-voltage and low-current characteristics make it ideal for use in these applications.
Working Principle
The 1N6488US works by controlling the amount of current that can flow through the diode. The diode has a reverse breakdown voltage which determines the amount of current allowed to flow through it.
When there is a voltage applied to the anode of a 1N6488US, an electric current flows through the diode until the voltage reaches the reverse breakdown voltage. When the voltage reaches the reverse breakdown voltage, the diode begins to limit the amount of current that can flow through it.
The amount of current allowed to flow through the 1N6488US is determined by its reverse leakage current, which is the amount of current that can flow through the diode when it is in its negative breakdown voltage state.
The reverse leakage current of the diode is determined by the reverse voltage and temperature. In order to control the amount of current that can flow through the 1N6488US, the anode voltage must be kept below the reverse breakdown voltage.
The 1N6488US is also able to withstand high-temperatures and is resistant to thermal and electrical shock. This makes the diode ideal for use in extreme temperatures, such as in automotive and telecommunications applications.
Conclusion
The 1N6488US is a specially designed Zener diode, which is used in a variety of AC and DC power applications, such as RF amplifiers, low-noise switching applications, battery charging applications, and semiconductor circuits. It is able to withstand high temperatures and is resistant to thermal and electrical shock, which make it ideal for use in automotive and telecommunications applications. The 1N6488US is also used in digital and analog electronic devices, such as computers, televisions, and radios.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| 1N646UR-1 | Microsemi Co... | 3.81 $ | 1000 | SILICON SWITCHING DIODESD... |
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| 1N6483HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
| 1N6483-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
| 1N6476 | Semtech Corp... | 7.29 $ | 1000 | TVS DIODE 51.6V 78.5V AXI... |
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| 1N6480-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
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1N6488US Datasheet/PDF