
Allicdata Part #: | 1N6482HE3/97-ND |
Manufacturer Part#: |
1N6482HE3/97 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 1A DO213AB |
More Detail: | Diode Standard 600V 1A Surface Mount DO-213AB |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.07578 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | 8pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AB, MELF (Glass) |
Supplier Device Package: | DO-213AB |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | 1N6482 |
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The 1N6482HE3/97 is a single rectifier diode designed to provide cost effective solutions in a broad variety of applications. It is typically used as an output capacitor free-wheeling diode in forward converter and other regulated switched-mode circuits.The 1N6482HE3/97 has a high-speed switching performance and low forward voltage drop that allows it to efficiently manage power dissipation and reduce heat buildup in the circuits where it is used.
The 1N6482HE3/97 is available in an industry standard LUPAK TO-220F package for easy implementation in circuit designs.The package is constructed to provide excellent thermal management in order to reduce over-temperature conditions, even when used in high-power applications.
Application Field
The 1N6482HE3/97 is mainly used in the areas of DC-DC converters, switching regulators, computer power supplies, power converters and general industrial and commercial applications. Examples of common applications include switching power supplies, adapters and battery charging circuits, converters and other specialized energy management applications.
The 1N6482HE3/97 is designed to optimize performance while minimizing cost and offering superior thermal performance. Its UL/IEC ratings and low forward voltage characteristics make it a smart choice for many general purpose, industrial and commercial applications.
Working Principle
The 1N6482HE3/97 is a single rectifier diode designed to provide efficient rectified current via its low voltage drop, low forward impedance and fast switching times. It is designed to reduce power dissipation and heat buildup in circuits that require fast switching, high efficiency, and low EMI. The device is designed with a very low forward voltage drop of less than 0.60 V to maximize efficiency and performance. Its high switching speed enables it to handle higher-frequency operations, while its low forward impedance ensures that the power being managed is accurate.
The 1N6482HE3/97 is designed to be as efficient as possible, with its low forward voltage drop, very low junction capacitance, and very fast switching speeds. The device is also designed for maximum thermal management with its highly conductive bonding wires and very thermally conductive packaging material.
To maximize current and reduce voltage drops, the 1N6482HE3/97 is designed with high power dissipation, low forward voltage drop, and low junction capacitance. Its low capacitance reduces switching losses and reduces the possibility of overshoot and ringing at the output of the application.
Overall, the 1N6482HE3/97 is designed to provide cost effective solutions for a variety of applications, while providing a very low voltage drop, fast switching speeds, low junction capacitance, and excellent thermal management. This rectifier diode is an ideal choice for DC-DC converters, switching regulators, computer power supplies, and power converters.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N6478HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N6479HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N6490US | Microsemi Co... | 11.77 $ | 59 | DIODE ZENER 5.1V 1.5W D5A... |
1N6461 | Semtech Corp... | 6.19 $ | 1000 | TVS DIODE 5V 9V AXIAL |
1N6483HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 800V 1A DO... |
1N6482-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N6468US | Semtech Corp... | 8.09 $ | 1000 | TVS DIODE 51.6V 78.5V |
1N6489 | Microsemi Co... | 8.67 $ | 1000 | ZENER DIODEZener Diode |
1N6473 | Semtech Corp... | 7.29 $ | 1000 | TVS DIODE 24V 41.4V AXIAL |
1N6489US | Microsemi Co... | 9.18 $ | 1000 | ZENER DIODEZener Diode |
1N6474US | Semtech Corp... | 8.29 $ | 1000 | TVS DIODE 30.5V 47.5V GME... |
1N6484HE3/96 | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N6468 | Microsemi Co... | 12.82 $ | 16 | TVS DIODE 51.6V 78.5V AXI... |
1N6480-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N6479-E3/96 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
1N646UR-1 | Microsemi Co... | 3.81 $ | 1000 | SILICON SWITCHING DIODESD... |
1N6470US | Semtech Corp... | 8.29 $ | 1000 | TVS DIODE 6V 11V GMELF |
1N6485US | Microsemi Co... | 9.18 $ | 1000 | ZENER DIODEZener Diode |
1N645UR-1 | Microsemi Co... | 1.69 $ | 1000 | DIODE GEN PURP 225V 400MA... |
1N646-1 | Microsemi Co... | 1.08 $ | 1000 | DIODE GEN PURP 300V 400MA... |
1N6492 | Microsemi Co... | -- | 1000 | ZENER DIODEZener Diode |
1N6485 | Microsemi Co... | 8.67 $ | 1000 | ZENER DIODEZener Diode |
1N6481-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N645-1E3 | Microsemi Co... | 1.03 $ | 1000 | SWITCHING DIODEDiode Stan... |
1N6479HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
1N6486 | Microsemi Co... | 8.67 $ | 1000 | ZENER DIODEZener Diode |
1N6463US | Semtech Corp... | 8.09 $ | 1000 | TVS DIODE 12V 22.6V |
1N6465US | Semtech Corp... | 8.09 $ | 1000 | TVS DIODE 24V 41.4V |
1N647-1 | Microsemi Co... | 2.05 $ | 4401 | DIODE GEN PURP 400V 400MA... |
1N6466 | Semtech Corp... | 6.19 $ | 1000 | TVS DIODE 30.5V 47.5V AXI... |
1N6481HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
1N647UR-1 | Microsemi Co... | 3.16 $ | 1000 | DIODE GEN PURP 400V 400MA... |
1N6482HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
1N646 | Microsemi Co... | 1.08 $ | 1000 | SILICON SWITCHING DIODESD... |
1N645-1 | Microsemi Co... | 1.58 $ | 1628 | DIODE GEN PURP 225V 400MA... |
1N6484HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
1N6481-E3/96 | Vishay Semic... | 0.08 $ | 4500 | DIODE GEN PURP 400V 1A DO... |
1N6478-E3/97 | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N6478HE3/97 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N6487 | Microsemi Co... | 8.67 $ | 1000 | ZENER DIODEZener Diode |
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