Allicdata Part #: | 2N4119A-E3-ND |
Manufacturer Part#: |
2N4119A-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V 200UA TO-206AF |
More Detail: | JFET N-Channel 40V 300mW Through Hole TO-206AF (T... |
DataSheet: | 2N4119A-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 40V |
Current - Drain (Idss) @ Vds (Vgs=0): | 200µA @ 10V |
Voltage - Cutoff (VGS off) @ Id: | 2V @ 1nA |
Input Capacitance (Ciss) (Max) @ Vds: | 3pF @ 10V |
Power - Max: | 300mW |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-206AF, TO-72-4 Metal Can |
Supplier Device Package: | TO-206AF (TO-72) |
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JFETs (Junction Field-Effect Transistors) can be used as an efficient method to control current or voltage flow. One type of JFET, the 2N4119A-E3, is specifically designed to be used in low-cost and miniature applications, such as radio frequency (RF) amplifiers and receivers, electronic amplifiers, audio circuits and digital circuits. With its simple and reliable construction, this device is well-suited for a range of applications.
The construction of the 2N4119A-E3 is generally similar to that of other JFETs. This device is composed of two silicon “source” and “drain” regions, which are connected to a circuit board. A “gate” electrode is attached to the device, which controls the current flow. The source is connected to a positive voltage and the drain to a negative voltage; the reverse of this configuration is also possible.
The basic principle of operation for the 2N4119A-E3 is relatively simple. A voltage is applied to the gate of the device, which creates an electric field in the channel between the source and the drain. This electric field inhibits current flow, allowing the device to act as a “switch” or “valve”, thus controlling the current or voltage applied to an external circuit.
As mentioned earlier, the 2N4119A-E3 is designed for use in low-cost and miniature applications. Its small size and high input impedance make it an ideal choice for such applications, as it can be easily connected to existing circuitry without requiring bulky or high-cost components. Additionally, the device can be easily operated with low voltages, allowing it to be used in energy-saving circuits.
The 2N4119A-E3 is also suitable for radio frequency (RF) amplifiers and receivers due to its high input impedance as well as its low power requirement. Additionally, the device’s low voltage operation capability eliminates the need for bulky and expensive power supplies. The device is also suitable for use in audio and digital circuits, as it is capable of providing low-noise operation and excellent signal-to-noise ratios.
In conclusion, the 2N4119A-E3 is an effective and cost-efficient solution for many types of low-power and miniature applications. Its simple construction and excellent characteristics make it an ideal choice for a wide range of applications, including RF amplifiers and receivers, audio and digital circuits and energy-saving circuits.
The specific data is subject to PDF, and the above content is for reference
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