Allicdata Part #: | 2N4125_S00Z-ND |
Manufacturer Part#: |
2N4125_S00Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 30V 0.2A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 30V 200mA 625mW Thro... |
DataSheet: | 2N4125_S00Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 2mA, 1V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N4125 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
。2N4125_S00Z is a single Bipolar Junction Transistor (BJT). It has two powerful functions, suitable for switching and for linear amplification.
Features of 2N4125_S00Z
- Collector Current Rating of 500mA
- Collector-Emitter Voltage of 40V at a Collector Current of 10mA
- High Voltage DC current gain of 140
- High Power Dissipation Dissipation
- Reliable and Safe Operation
Applications of 2N4125_S00Z
- Switching Devices (Relays & Solenoids)
- Amplification Circuits
- Low Noise Audio Circuits
- Inverters, Regulators & DC to DC Converters
- Power Amplifier Circuits
- Medical Equipment
2N4125_S00Z Working Principle
A Bipolar Junction Transistor (BJT) is a three-terminal semiconductor device consisting of a base, collector and emitter. The BJT is formed by putting two semiconductor material between the base and emitter.
The base-emitter junction is designed to facilitate the flow of current by allowing electrons to be injected into the emitter. This causes a potential difference between the emitter and collector, resulting in electron flow from the emitter to the collector. The collector voltage can vary dependent upon the base current.
The current gain of a BJT depends upon the collector current, base current and characteristic of the transistor. The current gain is expressed as “hFE” and is the ratio of the collector current (I_C) to the base current (I_B).
BJTs can be used in two configurations: common-emitter and common-base. In the common-emitter configuration, the collector is the output of the BJT and is always at a higher potential than the base, whilst in the common-base configuration, the emitter is the output and is always at a lower potential than the base.
2N4125_S00Z is a single Bipolar Junction Transistor (BJT). It has two powerful functions, suitable for switching and for linear amplification. It has a DC current gain of 140 at an emitter current of 20mA and collector current of 10mA. This makes it suitable for use in switching or amplifier circuits with a collector current rating of up to 500mA.
In conclusion, 2N4125_S00Z is an ideal choice for a wide range of applications from amplifiers and inverters, to medical equipment and switching devices. Its two powerful functions make it a reliable and safe choice for various circuits, with a high DC current gain and high power dissipation dissipation.
The specific data is subject to PDF, and the above content is for reference
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