2N5088TAR Allicdata Electronics

2N5088TAR Discrete Semiconductor Products

Allicdata Part #:

2N5088TARTB-ND

Manufacturer Part#:

2N5088TAR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 30V 0.1A TO-92
More Detail: Bipolar (BJT) Transistor NPN 30V 100mA 50MHz 625mW...
DataSheet: 2N5088TAR datasheet2N5088TAR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V
Power - Max: 625mW
Frequency - Transition: 50MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: 2N5088
Description

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2N5088TAR Applications and Working Principle

The 2N5088TAR is a special variation of a bipolar junction transistor, commonly known as Bipolar-Junction Transistor (BJT) or just BJT. It is an especially potent version of the normal PNP diffused Silicon transistor, designed primarily for use in high-frequency, low-power applications and is commonly used in audio frequency circuits.

As such, the most common uses of the 2N5088TAR are in amplifiers, oscillators and radio frequency (RF) front ends. The device can be used to amplify AC voltages and provide high-frequency response that is lower than most other types of transistors, which makes it ideal for audio-frequency applications. In addition, the 2N5088TAR also has a low noise figure, which makes it useful for low-noise applications such as RF and microwave applications.

The 2N5088TAR is operated in two commonly used configurations: the common-base configuration, and the common-emitter configuration. In the common-base configuration, the 2N5088TAR is used to amplify a signal by taking advantage of the gain factor of the transistor. In the common-emitter configuration, it is used to convert current into voltage, by drawing current through the emitter and transferring the signal to the collector.

The working principle of the 2N5088TAR is based on that of a conventional PNP diffusion Silicon transistor. In this configuration, the base is the control element that turns on the current, which is then collected at the collector. The amount of current that flows from the collector of the transistor depends upon the voltage applied to the base of the device. This current is then amplified, and the amplified signal is collected at the collector.

The 2N5088TAR is a low power device, and is especially useful for portable applications, where power consumption must be kept to a minimum for efficient operation. The device is available in through-hole packages and surface mount packages, providing flexibility for different applications. The device can also be configured in a number of different configurations, providing versatility in design.

The 2N5088TAR is used in a variety of applications in the consumer electronics market, such as computers, cell phones and gaming consoles. As well, it is also used in the industrial and automotive markets, providing robust and reliable operation. It is an ideal device for applications that require low power, low noise and high-frequency performance.

The 2N5088TAR is a very reliable and high-performance device, suitable for many different application fields. It is often used in audio frequency circuits, RF front ends, amplifiers and oscillators. Its low power consumption and high-frequency response make it ideal for low-noise applications in high-frequency applications. The device is widely available and is relatively easy to use and configure in a variety of configurations.

The specific data is subject to PDF, and the above content is for reference

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