Allicdata Part #: | 2N5086TF-ND |
Manufacturer Part#: |
2N5086TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 50V 0.1A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 100mA 40MHz 625mW... |
DataSheet: | 2N5086TF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 150 @ 100µA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | 40MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5086 |
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The 2N5086TF is a general-purpose silicon NPN power transistor that is designed for linear and digital switching applications. It is designed with an optimized planar structure for low noise, high breakdown voltage and low on-state resistance. The 2N5086TF can operate up to 200V and is capable of handling up to 6A of collector current. It is also available in a variety of package sizes, which allows for flexible applications.
Application fields for the 2N5086TF mainly include DC-to-DC converters, SMPS, drivers, switches and linear amplifiers. The 2N5086TF has superior performance characteristics such as low noise, low on-state resistance, wide operation temperature range and high breakdown voltage, so it is ideal for use in all kinds of linear switching applications. The 2N5086TF can also be used as a general-purpose power switch, as well as in high-power applications such as motor control, lighting and general ignition.
The 2N5086TF is a bipolar transistor, which means that it is a signal and power device that is operated by a single voltage source. It is made up of three layers of semiconductor material that are sandwiched together. The bottom layer is known as the base, the middle layer is called the collector and the top layer is known as the emitter. The base is connected to the voltage source, and the emitter is connected to the ground. The collector is the output of the device, and it is used to control the flow of current from the base to the emitter.
The working principle of the 2N5086TF is simple. When the base is connected to the voltage source, current flows from the base to the emitter, which is connected to the ground. This current then passes through the collector, which is the output of the device. The amount of current that flows through the collector can be controlled by the voltage applied to the base. The higher the voltage applied to the base, the more current that is allowed to pass through the collector.
The 2N5086TF is a versatile and reliable semiconductor device that is ideal for applications that require low noise, high breakdown voltage and low on-state resistance. It is capable of handling up to 6A of collector current, and is available in a variety of package sizes. It is suitable for use in general-purpose switching and power applications, as well as in high-power motor control, lighting and ignition applications.
The specific data is subject to PDF, and the above content is for reference
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