2N5089TF

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The 2N5089TF is a PNP silicon general purpose amplifier transistor, classified as a part of the BJT single bipolar transistors. It is housed in TO-92 packages and offers quite good gain values for common application fields. Depending on the standard or operating conditions, the 2N5089TF exhibits the following characteristics, including a maximum voltage of 40V (VCEO), a current gain of 700-1000 (hFE) and a maximum power dissipation of 500mW (PD).

Working Principle

The 2N5089TF is based on the classical PNP Planar process that has been in use for many years in bipolar transistors. This means that the electrons, featured by the P-type base, penetrate through the base-collector junction and into the N-type collector region. During this process, the collector current is largely proportional to the base current, as the current gain is determined by the ratio of the collector current to the base current. This means that the higher the collector current is, the higher the base current must be to maintain the current gain, resulting in an amplified output signal.

Aside from the fundamental current gain, the 2N5089TF offers several other useful features, such as high current gain stability, with a typical current gain of 0.8mA/V, and good frequency response with a cutoff frequency of 1MHz. It also offers excellent switching performance with a maximum transition frequency of 0.8MHz.

Application Fields

Due to its versatile features, the 2N5089TF is a suitable choice for various applications. One common application field is amplifier circuits, where it can be used as a pre-amplifier, or as a driver for a power amplifier. The device can also be used for battery-powered applications, as it offers low power dissipation and high voltage operation. Moreover, it can be used for audio signal amplification (i.e. players, recorders, etc.), frequency generators, switching circuits and a wide range of other applications.

In conclusion, the 2N5089TF is an ideal choice for a wide variety of common applications. Its attractive features, such as low power dissipation, high voltage operation and good current gain stability, make it well suited for amplifier applications, audio signal amplification, switching circuits and many more.

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