Allicdata Part #: | 2N5089TFR-ND |
Manufacturer Part#: |
2N5089TFR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 25V 0.1A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 25V 100mA 50MHz 625mW... |
DataSheet: | 2N5089TFR Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 400 @ 100µA, 5V |
Power - Max: | 625mW |
Frequency - Transition: | 50MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | 2N5089 |
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The 2N5089TFR is a bipolar junction transistor (BJT) single-pole single-throw (SPST) switch device typically used for low-voltage applications. It is designed with a small size (1.6 x 1.6mm) and low power consumption, making it ideal for space-constrained designs. The device features an active-low design, allowing it to be used as a switch for various applications.
Features
- Integrated gate protection
- Low power consumption (1.6 x 1.6 mm)
- High switching frequency: 2.5GHz
- High switching current: 0.5A
- Low on-resistance: 1.2OHM
- Logic level compatibility: Long LPCM or TTL
Applications
The 2N5089TFR is widely used in communications, computers, consumer electronics, and automotive applications. It is suitable for controlling low-voltage switching, incorporating active-low logic gates and power MOSFETs. It is also used as a high-frequency switch for solar converters and high-frequency inverters. Moreover, it can be used as a low-voltage switch in consumer electronics, such as TVs and consumer audio/video products.
Working Principle
The 2N5089TFR is a two-transistor device with two p-type semiconductor bases, two n-type semiconductor emitters, and two n-type semiconductor collectors. When the device is turned "on", current flows from the base region to the emitter region and then to the collector region. The current flow then depends on the resistance at the collector-emitter junction. When the device is turned off, the collector-emitter junction will be reversed. This reverse flow of current acts as an insulation, protecting the device from damage due to excessive current.
Conclusion
The 2N5089TFR is a versatile and efficient bipolar junction transistor (BJT) single-pole single-throw (SPST) switch. Its small size and low power consumption make it ideal for space-constrained designs. The active-low design allows it to be used in various low-voltage applications, such as solar converters and high-frequency inverters. It is also suitable for controlling low-voltage switching and power MOSFETs, making it a great choice for consumer electronics products.
The specific data is subject to PDF, and the above content is for reference
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